FDPF8N50NZF

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	735pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	UniFET-II™
Rds On (Max) @ Id, Vgs:	1 Ohm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The FDPF8N50NZF is a field-effect transistor (FET) manufactured by Fairchild Semiconductor. It is an N-channel FET and is classified as a single type, meaning that it can only be used as an individual device and cannot be combined with other FETs to provide more complex circuit designs. This transistor is primarily used to amplify or switch electrical signals, allowing them to be manipulated in a variety of ways. It is also used to protect sensitive circuitry from high voltage fluctuations and unwanted current surges, providing a low-impedance path for the current to flow before damaging the delicate elements of the circuit.

The FDPF8N50NZF is a heavily doped, silicon-based device and was designed to be compatible with many manufacturing processes, including CMOS and BiCMOS. The FDPF8N50NZF utilizes the E-mode of conduction, which is used in many device applications to provide more control over the electrical parameters of the device. It has a Vgs (gate voltage) range of –20V to +20V, a maximum drain current of 20 amp, and a drain-source breakdown voltage of 500 volts.

The working principle of the FDPF8N50NZF is based on the physics of charge carriers in a semiconductor. The FET is composed of three main components: the gate, the source, and the drain. When a voltage is applied to the gate, a conductive channel is formed between the source and the drain, allowing current to flow. This action is controlled by the width and depth of the channel as well as the voltage applied to the gate. The device has two basic modes of operation: the enhancement mode and the depletion mode. In the enhancement mode, the channel is initiated by a voltage applied to the gate, creating a positively charged area. This positive charge attracts electrons to the channel, thereby creating a conductive path between the source and the drain.

In the depletion mode, the channel is created without any need for an external voltage. When the voltage applied to the gate is reversed, the positive area will essentially repel the electrons, thereby eliminating the conductive channel and switching the FET off. This action is controlled by the size of the channel as well as the voltage applied to the gate. The FDPF8N50NZF has a gate capacitance of 150 pF, which is useful for controlling the speed at which the device operates.

In terms of applications, the FDPF8N50NZF is used in a variety of systems, including computers and other electronics. It is often used as a switch or amplifier in audio and video equipment, providing precise control over the signals passing through it. The device can also be used in battery-powered circuit designs, as it is capable of operating at very low voltages while still maintaining a high degree of signal integrity. Additionally, the FDPF8N50NZF can be used in high-voltage applications and is often incorporated into power converters and motor control circuits.

The FDPF8N50NZF field-effect transistor is a versatile and reliable device capable of operating in a variety of applications. It has a wide voltage range and can be used in low- or high-voltage systems. It also has a high switching speed combined with a low gate capacitance, making it ideal for controlling signals with a high degree of precision. Additionally, the device can be used to protect sensitive circuitry from high voltages, providing a low-impedance path for the current to flow before damaging the delicate elements of the circuit.

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