Allicdata Part #: | FDPF6N60ZUT-ND |
Manufacturer Part#: |
FDPF6N60ZUT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V TO-220F-3 |
More Detail: | N-Channel 600V 4.5A (Tc) 33.8W (Tc) Through Hole T... |
DataSheet: | FDPF6N60ZUT Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 33.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 865pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FDPF6N60ZUT is an N-channel enhancement-mode power field-effect transistor (FET) with good switching characteristics based on its low on-resistance. This transistor, which is produced by Fairchild Semiconductor, features a low thermal resistance and is suitable for high frequency switching. It comes in a zero-lead SMD package that takes up minimal board space, making it perfect for use in a variety of compact and high density applications.
The FDPF6N60ZUT is designed for use in power management circuits such as DC/DC converters, load switches, and load regulators. It works well in high frequency applications and is especially useful for controlling power to integrated circuits that require more current than can be safely supplied by logic-level MOSFETs. In these applications, it is used to provide additional drive to power MOSFETs, allowing for increased control of current flow compared to single MOSFET solutions.
The FDPF6N60ZUT offers a low on-resistance and fast switching speeds. The low on-resistance is possible due to its advanced processing design, which allows it to offer 30% lower R DS(ON) than other FETs with similar specifications. Additionally, its logic-level gate threshold voltage ensures that it can be controlled with low gate-source voltage signals.
The FDPF6N60ZUT operates based on a simple field-effect principle, whereby a voltage applied to the gate of the transistor affects the current that is able to flow between the drain and the source. At low voltage, the device blocks the flow of current, while when the gate voltage is increased, the resistance between the drain and source is reduced, allowing current to flow more easily. The higher the applied voltage, the lower the resistance, allowing for more current flow. This transistor also has a quickly rising characteristic, allowing current to build up quickly and produce higher performance.
The FDPF6N60ZUT is available in two versions: the single-channel version and the dual-channel version. The dual-channel version has two separate N-type MOSFETs in one package, while the single-channel version, commonly known as an "enhancement-mode FET," has just one N-type MOSFET. Both versions have low static and dynamic on-resistance, allowing them to efficiently switch on and off quite quickly. The single-channel version also has a relatively high rated current capability, which allows it to switch significant amounts of current with a relatively small voltage drop.
In summary, the FDPF6N60ZUT is a high-performance N-channel enhancement-mode power field-effect transistor that is specially designed for use in power management circuits. Its low on-resistance and fast switching speeds make it ideal for controlling large currents. It is available in two versions: the single-channel version and the dual-channel version. The single-channel version is particularly suited for high frequency applications, and the dual-channel version is useful for providing redundant switching. This transistor also has a high rated current capability and is available in a SMD package, making it well suited for use in compact and high density circuits.
The specific data is subject to PDF, and the above content is for reference
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