FDPF190N15A Allicdata Electronics
Allicdata Part #:

FDPF190N15A-ND

Manufacturer Part#:

FDPF190N15A

Price: $ 1.83
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 27.4A TO-220F
More Detail: N-Channel 150V 27.4A (Tc) 33W (Tc) Through Hole TO...
DataSheet: FDPF190N15A datasheetFDPF190N15A Datasheet/PDF
Quantity: 1000
1 +: $ 1.66320
10 +: $ 1.50129
100 +: $ 1.20632
500 +: $ 0.93823
1000 +: $ 0.77739
Stock 1000Can Ship Immediately
$ 1.83
Specifications
Series: PowerTrench®
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19 mOhm @ 27.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2685pF @ 25V
FET Feature: --
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F-3
Package / Case: TO-220-3 Full Pack
Description

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The FDPF190N15A is a single N-channel Enhancement Mode Power MOSFET, also known as a MOSFET transistor, that is used for various power electronics applications. This type of MOSFET is typically used in high current, low voltage switching devices, such as power supplies, amplifiers and motor drivers. The FDPF190N15A is also capable of higher voltages up to 150V and offers a good compromise between high efficiency, low gate charge and fast switching speeds.

Application Field

The FDPF190N15A MOSFET is ideal for high current load switching, especially in applications where efficiency is paramount such as DC-DC converters and switch mode power supplies. The device is well suited to current limiter, flyback, forward and synchronous rectifier circuits due to its low Rds (on) value and high power handling capabilities. Some other typical applications include motor control, battery chargers, displays and air-conditioning systems.

Working Principle

The FDPF190N15A is a type of Field Effect Transistor (FET) that utilizes an electric field to transfer the current from the drain to the source. This makes it unique from a Bipolar Junction Transistor (BJT) which uses current flow through base-emitter junction for switching purposes. The source-drain channel is formed by a conducting drift channel and is distinguished by a gate insulation layer towards its top. The device can be found in a variety of packages and supports a maximum drain source voltage of 150V.

The FDPF190N15A MOSFET has an enhancement mode operation, meaning it requires a positive gate voltage to allow current to flow from the drain to the source. This greatly reduces the power losses associated with switching applications and makes the device extremely efficient. The device employs a simplified three terminal regime and is capable of very fast switching speeds with a low gate charge. In turn, this makes the FDPF190N15A an ideal choice for high power, low voltage load switching.

The specific data is subject to PDF, and the above content is for reference

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