
Allicdata Part #: | FDPF3N50NZ-ND |
Manufacturer Part#: |
FDPF3N50NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 3A TO-220F |
More Detail: | N-Channel 500V 3A (Tc) 27W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 197 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 27W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Series: | UniFET-II™ |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FDPF3N50NZ is a high-voltage, low-current, depletion-mode, N-channel field effect transistor (FET). It is an electronic switch commonly used in power supplies, motor control and battery management systems. The FDPF3N50NZ is a versatile and cost-effective form of FET, offering superior performance for high-voltage applications.
FDPF3N50NZ Application Field
The FDPF3N50NZ FET is widely employed in various power supply and motor control applications due to its low ON resistance, high voltage rating and excellent thermal performance. It is particularly useful for applications requiring high efficiency, such as ultra-low voltage power supplies, battery management systems, and DC-DC converters. Due to its low gate charge and low gate input capacitance, the FDPF3N50NZ is also well-suited for synchronous rectifier applications. In addition, this FET has excellent thermal and repeatability characteristics, making it an ideal choice for motor control and gate drive circuits.
FDPF3N50NZ Working Principle
The FDPF3N50NZ works according to the principles of field effect technology. This FET consists of a gate, source and drain, which are separated by an oxide layer. Applying a voltage to the gate will control the source-drain current. When a positive voltage is applied to the gate, electrons will be repelled from the oxide layer, creating a conducting “channel” between the source and drain. This allows current to flow from source to drain. When the gate voltage is reduced, the channel is “pinched off” and no current can flow. This is the basic principle of FET technology.
Due to its depletion-mode architecture, the FDPF3N50NZ FET is able to start conducting with a low gate voltage. This allows the device to be used in applications where a low gate voltage is needed, such as battery management systems. In addition, this FET has a low gate threshold voltage, which allows the device to be used in low-voltage applications.
The FDPF3N50NZ is a highly reliable and cost-effective FET. It is able to provide superior performance in high-voltage and low-current applications, while offering excellent repeatability and thermal performance. As such, it is an ideal choice for a wide range of power supply, motor control and battery management systems.
The specific data is subject to PDF, and the above content is for reference
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FDPF12N60NZ | ON Semicondu... | -- | 281 | MOSFET N-CH 600V TO-220F-... |
FDPF7N60NZ | ON Semicondu... | -- | 662 | MOSFET N-CH 600V 6.5A TO-... |
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