Allicdata Part #: | FDPF16N50T-ND |
Manufacturer Part#: |
FDPF16N50T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 16A TO-220F |
More Detail: | N-Channel 500V 16A (Tc) 38.5W (Tc) Through Hole TO... |
DataSheet: | FDPF16N50T Datasheet/PDF |
Quantity: | 2824 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1945pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FDPF16N50T is a Field-Effect Transistor (FET) belonging to the N-channel MOSFET family. It is an ideal device for power conversion and switching applications in consumer, industrial and automotive use, due to its high efficiency, fast switching and low conduction losses. In order to understand how it works and its applications, let us first introduce its structure and components.
FDPF16N50T Structure and Components
FDPF16N50T consists of a substrate, two MOSFETs, a resistor and two capacitors. The substrate is a silicon substrate of dielectric filled with N-type impurities. The two MOSFETs are P-type channel and N-type channel transistors, which form the gate-source junction. The resistor is a current path between the gate and source of the two MOSFETs. The two capacitors provide the necessary gate source capacitance for the N-channel MOSFET. This structure provides efficient switching and low conduction losses.
FDPF16N50T Application Field and Working Principle
FDPF16N50T is an ideal device for power conversion and switching applications in consumer, industrial and automotive use. It is a perfect choice for applications such as DC-DC power converters, power factor correction circuits, inverters, phase control and proportional-integral-derivative (PID) controllers. due to its high efficiency and fast switching. At its core, FDPF16N50T operates under the principle of Field effect. The voltage applied to the gate in the device modulates the flow of current in the channel. The threshold voltage of the device, VGS, is designed to switch the device on and off, thus regulating the current flow and controlling the device\'s output. At low VGS, the device is off, while at high VGS, the device is on, providing an effective means of regulating current flow in the device.
FDPF16N50T is characterized by low on-resistance and low conduction losses, making it an ideal choice for power conversion and switching applications.
Due to its fast switching speed, FDPF16N50T can also be used in high frequency applications such as PWM controllers and RF (radio frequency) amplifiers. It is also used in high side switch applications, as the high on-resistance helps reduce power dissipation. Furthermore, due to its low power dissipation, FDPF16N50T can be used in applications where power efficiency is critical, such as battery management solutions.
FDPF16N50T is a versatile device which can be used in a wide range of applications. Its low on-resistance, high switching speed and low conduction losses ensure efficient power management and switching.
The specific data is subject to PDF, and the above content is for reference
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