| Allicdata Part #: | FDPF52N20T-ND |
| Manufacturer Part#: |
FDPF52N20T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 52A TO-220F |
| More Detail: | N-Channel 200V 52A (Tc) 38.5W (Tc) Through Hole TO... |
| DataSheet: |  FDPF52N20T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 38.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 49 mOhm @ 26A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The FDPF52N20T is a popular field-effect transistor (FET) semiconductor device. In the MOSFET family, single FETs are commonly used in a wide range of circuits, including digital logic and analog signal processing. This guide explains the FDPF52N20T’s application field and working principle to provide engineers with a better understanding of its use and operation.
Applications of the FDPF52N20T
The FDPF52N20T N-channel FET is a fast-switching, low-loss device that is optimized for power control applications. Its low capacitance and low on-resistance make it a good choice for use as a power switch in high-speed switching applications. Additionally, its low on-resistance allows it to be used as a voltage regulator in circuit designs that require current protection or voltage stabilization. It is also used as an amplifier in RF applications, and it is capable of handling high frequencies up to 2.5 GHz. Furthermore, its excellent thermal resistance makes the FDPF52N20T suitable for use in high temperature environments.
The FDPF52N20T N-channel FET is a fast-switching, low-loss device that is optimized for power control applications. Its low capacitance and low on-resistance make it a good choice for use as a power switch in high-speed switching applications. Additionally, its low on-resistance allows it to be used as a voltage regulator in circuit designs that require current protection or voltage stabilization. It is also used as an amplifier in RF applications, and it is capable of handling high frequencies up to 2.5 GHz. Furthermore, its excellent thermal resistance makes the FDPF52N20T suitable for use in high temperature environments.
Working Principles of the FDPF52N20T
The FDPF52N20T is a voltage-controlled FET, meaning that its on-state current flow is controlled by a gate-source voltage. When the gate-source voltage is low (or negative), the FDPF52N20T’s channel is off, and no current flows from the drain to the source. When the gate-source voltage is high (above the threshold voltage), the FDPF52N20T’s channel is on, and the drain current is proportional to the gate-source voltage. This is known as the MOSFET’s “saturation region.” To control the voltage and current flow in the device, the gate-source voltage can either be positively or negatively charged.
The FDPF52N20T is a voltage-controlled FET, meaning that its on-state current flow is controlled by a gate-source voltage. When the gate-source voltage is low (or negative), the FDPF52N20T’s channel is off, and no current flows from the drain to the source. When the gate-source voltage is high (above the threshold voltage), the FDPF52N20T’s channel is on, and the drain current is proportional to the gate-source voltage. This is known as the MOSFET’s “saturation region.” To control the voltage and current flow in the device, the gate-source voltage can either be positively or negatively charged.
The FDPF52N20T uses a process technology called “TrenchFET” to reduce switching losses, enable low on-resistance, and achieve a high-speed operation. This technology allows for a very fast switching speed and low power dissipation, especially when compared to traditional MOSFETs. With the FDPF52N20T, engineers can achieve a 16 nanosecond maximum switch time.
In addition to its fast switching speed, the FDPF52N20T offers a wide range of protection features. It has reverse biased avalanche protection, which prevents a large current from flowing in the reverse direction and protects the device from damage by high ESD voltages. It also has current limiting protection, which prevents the device from being damaged by excessive currents.
The FDPF52N20T is an excellent choice for power control applications due to its fast switching speed, low on-resistance, high frequency capabilities, and wide range of protection features. Its trench technology gives it superior performance over traditional MOSFETs, making it an ideal choice for use in high temperature environments. The FDPF52N20T’s gate-source voltage controls its on-state current, and its wide range of protection features ensure its safety.
The specific data is subject to PDF, and the above content is for reference
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