FDS2170N3 Discrete Semiconductor Products

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The FDS 2170N3 is a single, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that has proven itself to be a reliable and efficient construction element. The device is a type of transistor, which is a semi-conductive material that serves as a connection between two circuits or other electrical components and allows for the control of current in both directions. This makes it ideal for use in many different applications and it is widely used in the electronics industry today.

The FDS 2170N3 transistor has a breakdown voltage rating of 30V. This is the maximum voltage that can be switched on and off in an external circuit with the same current level. The device also features a drain-source voltage of 60V, which is the maximum voltage between the source and the drain that can be switched in a circuit. The maximum continuous drain current is 7A, which is the maximum continuous current that can flow through the device.

When it comes to the FDS 2170N3’s application fields, it can be used in a variety of situations. These include high-power switching applications and load control circuits. It can also be used as a part of analogue and digital circuits, as well as in a number of other contexts. When it is used in a high-power switching circuit, it can be used to control the switching of heavy current loads, while in a load control circuit it can be used to control the current flow in different sections.

The FDS 2170N3 operates under direct current bias conditions, meaning that a voltage must be applied across its source and drain for it to function properly. The device also has a low threshold voltage of 2.5V, which is the minimum gate/source voltage needed for the transistor to start conducting current. The device also has a fast switching speed due to its high channel-carrier mobility and low gate capacitance.

When it comes to its working principle, the FDS 2170N3 is a charge-controlled device. This means that the current flowing through the device is determined by the amount of charge stored in its gate terminal. When the gate voltage is applied the charge stored in the gate terminal will be transferred to the channel, causing electrons to be attracted to the channel and allowing it to become conducting. In this way, the current flowing through the device is controlled by the amount of charge placed on the gate terminal.

The FDS 2170N3 is a versatile and reliable device, with applications ranging from load control to high-power switching. Its high channel-carrier mobility and low gate capacitance make it ideal for a variety of applications and its direct current capability allows for the control of current flow in many instances. Its low threshold voltage and fast switching speed further enhance its versatility, making it one of the most popular MOSFETs in the electronics industry.

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