FDS2582

A FDS2582 is an N-channel enhancement type MOSFET that is especially designed for use as a low (on) resistance switch in a variety of applications.

Application Field

The FDS2582 is ideally suited for High Side Switch, Load Switch, and Battery Switch applications in all portable or handheld devices such as cellular phones, PDAs and portable MP3 players. It is used as a low resistance switch for charge pump applications, as well as low-side power switching applications such as battery charging and power management. It is also applicable for any other high current switch applications.

Working Principle

The FDS2582 is an N-channel enhancement mode MOSFET. It is constructed with a vertical structure consisting of source contact, drain contact, gate dielectric, gate and well. The device operates using the enhancement mode which utilizes the vertical conductive channel formed by the source and drain contacts as the path of conduction. The device has a low (on) resistance and is thus capable of carrying high current with low voltage drop.

When the gate voltage is lower than the drain voltage, the channel of the FDS2582 will be in its OFF state. In the OFF state the channel between the drain and source contacts is open and the FET will not conduct current. When a gate voltage higher than the drain voltage is applied, the FET will convert to the ON state and current will flow through the channel at a low voltage drop.

The FDS2582 also has low gate charge and excellent thermal stability. These attributes make the FDS2582 an ideal choice for applications requiring low power consumption and high switching speed.

Conclusion

The FDS2582 is a low (on) resistance N-channel enhancement type MOSFET. It is ideally suited for High Side Switch, Load Switch, and Battery Switch applications in all portable or handheld devices. It provides low (on) resistance, low gate charge and excellent thermal stability. All these features make it suitable for a wide range of low-side power switching applications.