| Allicdata Part #: | FDS2734TR-ND |
| Manufacturer Part#: |
FDS2734 |
| Price: | $ 0.68 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 250V 3A 8-SOIC |
| More Detail: | N-Channel 250V 3A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: |  FDS2734 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.68000 |
| 10 +: | $ 0.65960 |
| 100 +: | $ 0.64600 |
| 1000 +: | $ 0.63240 |
| 10000 +: | $ 0.61200 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2610pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | UltraFET™ |
| Rds On (Max) @ Id, Vgs: | 117 mOhm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDS2734 is a N-Channel power field-effect transistor commonly used in power management systems. It is one of the most commonly used power MOSFET devices in the world, and is highly reliable. It is designed with high drain-to-source voltage rating and fast switching speed, making it ideal for use in applications such as switching power supplies, DC-DC converters, motor control and other power management circuits.
The FDS2734 is a single-gate power MOSFET designed for low-noise, fast-recovery switching applications. It is one of the latest members of the FDS2734 family, which offer superior performance over other MOSFETs for use in these applications. The FDS2734 has a drain-source breakdown voltage of 30V and a maximum drain current of 3.3A, making it well suited for use in high-current switching applications.
The FDS2734 is a simple device. It consists of a single P-Channel MOSFET with a built-in gate drive circuit. The FDS2734 has a common-source configuration, meaning it is connected between the supply voltage and the load. When a positive gate voltage is applied, it creates a vertical channel in the P-Channel MOSFET and current flows through the device. The device can be used as a switch in various applications, allowing for fast current switching with low power dissipation.
The FDS2734 uses a low gate voltage range from 3 to 8V, and has a very low on-resistance. This low on-resistance results in low power dissipation and high energy efficiency. Additionally, the gate drive circuitry ensures that the device will switch on quickly and accurately, which is important in high-precision applications. The FDS2734 can handle high switching rates up to 10A, making it suitable for use in high-frequency switching applications, such as switching power supplies or motor control.
The FDS2734 is a low-cost, low-profile device that is ideal for use in a variety of power management applications. It is simple to use, reliable, and offers excellent performance. It is a great choice for use in portable and handheld devices, automotive applications, and other applications requiring fast, low-power switching. The FDS2734 can also be used for other applications that require a low-voltage MOSFET.
The specific data is subject to PDF, and the above content is for reference
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