FDS2572 Allicdata Electronics
Allicdata Part #:

FDS2572TR-ND

Manufacturer Part#:

FDS2572

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 4.9A 8-SOIC
More Detail: N-Channel 150V 4.9A (Tc) 2.5W (Ta) Surface Mount 8...
DataSheet: FDS2572 datasheetFDS2572 Datasheet/PDF
Quantity: 20000
Stock 20000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDS2572 is a high-performance single field-effect transistor (FET) that is widely used in a variety of power electronics applications. It is designed for the applications that require high switching speed and low on-resistance. Some of its significant applications include power switches, light dimmers, smart system power controllers, and power amplifiers. The FDS2572 has been designed to operate over a wide range of temperatures and supply voltages, and is able to handle high transient voltages.

The FDS2572 belongs to the family of Field-effect transistors (FETs), which are unipolar electronic devices with three terminals: the source, the gate and the drain. An FET works as a switch or a variable resistor that can be used to control the electric current between these three terminals by changing the gate voltage. A positive gate voltage will “open” the switch, allowing a current to flow, whereas a negative gate voltage will close the switch and stop the current flow.

The FDS2572 single FET can be easily integrated into any application. It is usually fabricated using the latest semiconductor technologies, thereby providing superior performance and lower power loss. It can be connected in parallel or in series, which allows for flexibility in configuration. Furthermore, it can be configured as a current or voltage regulated device as required by the application.

The FDS2572 single FET works on the principle of the Hall-effect. When an electric field is applied to a material, it induces a voltage (or current) at right angles to both the direction of the electric field and the current flow. This principle is the basis of the FDS2572’s operation. The gate voltage is used to modulate the electric field, and the induced current is controlled by the drain voltage. This control of the current enables efficient operation and adaptive regulation.

The FDS2572 single FET offers a number of advantages in power electronics applications. It provides excellent performance, high switching speed, superior current and power handling capability, and low on-resistance, making it suitable for various applications. Its low operating voltage enables it to be used in low-voltage circuits, making it more power efficient. In addition, it has a small size, making it easier to incorporate into a device. Finally, its high reliability and durability make it highly reliable in power systems.

In conclusion, the FDS2572 is a high-performance single FET that is widely used in a variety of power electronics applications. It works on the principle of the Hall-effect and provides excellent performance, high switching speed, superior current and power handling capability, and low on-resistance. Its small size and low operating voltage enable it to be used in low-voltage and power-efficient circuits. Finally, it has high reliability and durability, making it highly reliable in power systems.

The specific data is subject to PDF, and the above content is for reference

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