FDS2170N7 Discrete Semiconductor Products

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FDS2170N7 is a type of advanced power MOSFET that are used in switching circuits. It is specifically designed for applications requiring low on-resistance and low gate drive power. It is an N-channel, normally-off, Enhancement-mode MOSFET with an integrated logic level enhancement. This type of power MOSFET has a Drain-Source voltage rating of VDSS of 20 Volts, drain current limit ID of 140 Amps and continuous power dissipation of PD of 933 Watts.

The FDS2170N7 is a high-speed, normally-off, low RDS(ON), low gate charge, advanced power MOSFET. It is designed to operate in high frequency switching applications, such as in power inverters, Uninterruptible Power Supply (UPS), automotive and industrial Power Management, AC-DC and DC-DC converters. The device features low on-resistance, low gate charge and low gate drive power which make it suitable to be used in these applications.

The FDS2170N7 device operates with a logic-level gate voltage. It is designed to be used in switching circuits with a minimum high level gate voltage, typically 3.5 Volts, and with a maximum level gate voltage of 12 Volts. This feature eliminates the need for external level shifters and makes it capable of handling even the high voltage systems.

The working principle of the FDS2170N7 is based on enhancement-mode MOSFET technology. It uses a drain current, or channel current, flow to control the input voltage at the gate terminal of the device. The flow of current is controlled by the gate-source voltage and is considered an input signal to the drain-source junction. The input voltage at the gate terminal will reduce the electron depletion layer at the junction. This will in turn allow current to flow between the source and drain.

The FDS2170N7 device has a low on-resistance of only 10 milliohms, which makes it suitable for applications requiring high current switching. It also provides a high switching speed of 45 nanoseconds, making it ideal for high frequency switching applications. It has a high continuous power dissipation of 933 Watts, which makes it suitable for use in high-power systems.

The FDS2170N7 power MOSFET has a low gate charge of 10nC, which makes it suitable for applications that require low gate drive power. It also has a built-in ESD protection, which provides better protection to the circuit components. The device also has an integrated soft-off feature that allows for soft switching, which helps to reduce the inrush current and the EMI.

The FDS2170N7 device is an ideal choice for applications requiring low cost, low on-resistance and low gate drive power. It is suitable for use in high frequency switching circuits, and its integrated logic level enhancement makes it easier to use in high voltage systems. Its low on-resistance and high continuous power dissipation make it suitable for use in high-power systems, while its low gate charge and built-in ESD protection provide better protection to the circuit components.

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