FDZ2553N

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FDZ2553N is a depletion mode N-channel Field Effect Transistor (FET) Array containing five FETs on a single chip with a sheet resistance of 50 ohms. Specifically, it is an array of 5 FETs in a 2 cm x 2 cm surface mount package. It is used in switching and interfacing applications, as well as data and signal processing. Each FET has a threshold voltage of 3 volts and an input capacitance of 550pF. FDZ2553N is widely used in high speed communications, RF testing, and data acquisition applications. The device has an on-resistance of 20 ohms and a cutoff frequency of 1.2 GHz. Additionally, it has an output impedance of 50 ohms and a lower power supply voltage of 1.5V. FDZ2553N also features low noise and low distortion features which make it ideal for use in applications requiring a high level of accuracy.The FDZ2553N’s working principle is based on the depletion mode MOS structure. This type of FET structure allows the FET to be turned on without the need to apply a gate voltage, as is required in an enhancement type device. When a voltage is applied to the source terminal, the FET’s gate-to-source junction will become reverse biased and the FET will enter the active operating region. The FET will turn off if the source terminal voltage is removed, or the voltage at the gate terminal is increased. A key feature of the FDZ2553N is its ability to function as a 5 channel array with a single power source. This allows the user to configure the device for use as a single channel, dual channel, triple channel or quad channel depending on the application. Such flexibility makes the FDZ2553N well suited for applications requiring multiple FETs to be driven by a single power source. It is also ideal for applications where it is necessary to retain the individual channel characteristics of each FET.The FDZ2553N is ideal for switching and interfacing applications due to its fast switching time (46 ns) and low power consumption (80uA). This FET array has no gate to drain capacitance, making it easier to design circuits with tight timing. Additionally, the high output impedance of the FETs allows high frequency signals to pass through without distortion. This feature is particularly useful in applications involving logic gates, analog to digital converters, and variable capacitor circuits.In summary, the FDZ2553N is a low power, fast switching, depletion mode N-channel FET array. It is suitable for applications demanding high accuracy and low distortion such as RF testing and data acquisition. Its ability to be used as a five channel array makes it an excellent choice for applications which require multiple FETs driven by a single power source. The FDZ2553N is also ideal for switching and interfacing applications.

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