Allicdata Part #: | FDZ204P-ND |
Manufacturer Part#: |
FDZ204P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 4.5A BGA |
More Detail: | P-Channel 20V 4.5A (Ta) 1.8W (Ta) Surface Mount 9-... |
DataSheet: | FDZ204P Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 9-WFBGA |
Supplier Device Package: | 9-BGA (2x2.1) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 884pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 4.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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FDZ204P Application Field and Working Principle
FDZ204P, also known as N-channel Field-Effect Transistor (NFET), is a type of semiconductor device commonly used in integrated circuits (ICs). This type of transistor has a gate, source and drain in a single package, making it a convenient and reliable choice for a variety of electronic applications. The FDZ204P typically has a maximum drain-to-source voltage of 20 volts, a gate-to-source voltage of 10 volts and a drain current of up to 175 milliamps.The FDZ204P is widely used in numerous applications in a variety of fields, including audio amplifiers and high-frequency inverters. It can also be found in security systems, industrial equipment, and many other electronic products. The FDZ204P is also highly reliable due to its low noise levels and low on-resistance, making it a great choice for any high-performance circuit design.In terms of its working principle, the FDZ204P is a type of FET (Field Effect Transistor) that is controlled by the gate-source voltage. This type of FET is different from the commonly used BJT (Bipolar Junction Transistor) because it does not require a base current for its operation. Instead, the voltage applied to the gate is the controlling factor. The higher the gate-source voltage, the more current will flow from the source to the drain.When the gate-source voltage is low, the transistor is in its off state, meaning no current will flow through the transistor. This is known as an "open" circuit. As the gate-source voltage is increased, the current flowing through the transistor increases until it reaches its saturation point, which is the maximum allowable current. This is known as a "closed" circuit. Once the saturation point has been reached, no further current will flow regardless of how high the gate-source voltage is increased.The FDZ204P offers a number of benefits over other types of transistors, including low voltage operation, low noise levels, and low on-resistance. It is also highly reliable and can be found in many different applications. This makes it a great choice for any high-performance circuit design.The specific data is subject to PDF, and the above content is for reference
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