Allicdata Part #: | FDZ298N-ND |
Manufacturer Part#: |
FDZ298N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 6A BGA |
More Detail: | N-Channel 20V 6A (Ta) 1.7W (Ta) Surface Mount 9-BG... |
DataSheet: | FDZ298N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 9-WFBGA |
Supplier Device Package: | 9-BGA (1.5x1.6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDZ298N is an N-channel enhancement mode field effect power transistor and is widely used in power electronics due to its small size, wide operating voltage range and high power output. It is designed for low-loss switching and subcircuit linear applications. It is mainly used in applications such as switch mode power supplies, DC-DC converters, battery chargers, inverters etc.
The FDZ298N is a single N-channel MOSFET with a drain-source breakdown voltage (VDSS) of 30V and a drain current (ID) of 1.2A. It is designed to provide superior performance and improved reliability in a variety of applications, including voltage regulators and power switching. Its low on-resistance (RDS) and low gate charge (Qg) make it an ideal choice for high-frequency, high-efficiency power switching applications.
The working principle of the FDZ298N is based on the Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). A MOSFET is a type of transistor that utilizes a channel of mobile electrons between the source and the drain to control current flow. The threshold voltage (VGS) of the MOSFET is used to control the responsiveness of the channel and can provide different forms of switching, such as pulse-width modulation, pulse-density modulation, etc. By adjusting the threshold voltage, the impedance of the channel can be changed to control a wide range of current values.
The FDZ298N features a built-in fast recovery diode, which allows it to efficiently control power surges and enables it to respond quickly to transient switching events. This diode is used to provide protection against short circuits, overcurrents and output voltage transients. It is also designed with a dynamic dV/dt protection which prevents sudden changes in the on-state resistance of the device in case of a fault condition. There is also a temperature compensation circuit included to enable the self-biasing of the gate.
The FDZ298N is mainly used in automotive and industrial applications due to its low on-resistance and fast switching speeds. It is also used in applications such as relay drivers, motor control and high-current switching. The device can be used in various types of power supply designs, such as DC-DC, AC-DC and SMPS with its built-in protection features. The device can be mounted in a variety of packages, such as SOT-23, DPAK and SMPAK.
In conclusion, the FDZ298N is a high-performance single N-channel MOSFET suitable for a wide range of applications. Its high drain-source voltage rating, low on-resistance and fast switching speeds make it an ideal choice for power switching applications. Its built-in fast recovery diode and temperature compensation circuit further enhance its performance and reliability in various applications.
The specific data is subject to PDF, and the above content is for reference
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