FDZ203N Allicdata Electronics
Allicdata Part #:

FDZ203N-ND

Manufacturer Part#:

FDZ203N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 7.5A BGA
More Detail: N-Channel 20V 7.5A (Ta) 1.6W (Ta) Surface Mount 9-...
DataSheet: FDZ203N datasheetFDZ203N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 9-WFBGA
Supplier Device Package: 9-BGA (2x2.1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1127pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FDZ203N is a type of Field-Effect Transistor (FET) designed to provide unparalleled electrical switching performance and low on-resistance. FETs are devices which are used to amplify current, control current flow and provide low-power electronic switching. This makes them ideal for a wide range of applications, such as power conversion, motor control and signal processing.

FDZ203N is a single-N-type FET. This type of FET is commonly referred to as a MOSFET (metal-oxide-semiconductor field effect transistor). This is because it uses a metal-oxide gate, instead of a conventional silicon gate. The FDZ203N incorporates a gate dielectric, which is a thin layer of metal-oxide, over the active transistor. This dielectric layer helps to prevent gate breakdown, allowing the FET to operate at higher voltages than conventional FETs.

The FDZ203N also has an extremely low on-resistance. This is important when using FETs for power applications as it means that the device can support higher current levels without excessive heating. This is because the resistance of the FET acts as a load on the power supply, consuming power and converting it into heat. The lower the resistance, the lower the power consumed, which can improve the efficiency of the power supply.

The FDZ203N can be used as a switch, an amplifier, or as a voltage regulator. As a switch, the FDZ203N can be used to turn an electronic device on or off, allowing the user to control when a device is powered. As an amplifier, it can be used to increase the power of an electronic signal. This can be used to increase the power of a signal before it is sent to an amplifier or to drive a motor. As a voltage regulator, the FDZ203N can be used to limit the maximum voltage to a safe level. This can help to protect electronic components from permanent damage caused by overvoltage or overcurrent.

The FDZ203N is also a low-cost solution when compared to other FETs. This is due to the low amount of materials and production processes used in its manufacture. Additionally, the FDZ203N is extremely reliable and has a long lifespan, making it an ideal choice for applications where reliability and long-term performance are important factors.

In summary, the FDZ203N is a single-N-type FET which offers a wide range of electrical switching performance and low on-resistance. It can be used as a switch, an amplifier, or a voltage regulator, and is a cost-effective solution when compared to other FETs. Its high reliability and long life make it an ideal choice for applications requiring reliable and long-term performance.

The specific data is subject to PDF, and the above content is for reference

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