FDZ291P Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDZ291P is a type of Field Effect Transistor (FET), more specifically classed as a N-Channel MOSFET, or a MOSFET single. In electrical engineering, this type of transistor is most commonly used as a switch, and in this sense, the FDZ291P is no exception.

It is not considered a simple device, despite being built on a semiconductor foundation, which is a keystone of modern electronics.

The FDZ291P is particularly attractive for low voltage applications, as the gate threshold voltage is 3V, meaning very little voltage is required to open the gate. This makes it much simpler to implement in a wide range of circuits.

The application fields for this type of transistor include low voltage switching circuits, motor control circuits, and audio power amplifiers. Any engineer looking to build these types of devices will find the use of the FDZ291P to be vastly beneficial.

The maximum drain-source voltage of this device is 20V, so it can handle moderately high voltage levels, and the on-state resistance of it is very low, making it more efficient when incorporating into a circuit.

The FDZ291P has very distinct advantages to a circuit designer, as within a P-Channel MOSFET, the device is simpler to operate, provides fast switching times, and naturally has an extremely high input impedance. This allows the device to be used in a wide range of applications, where low voltage levels are an essential.

In terms of its working principle, the FDZ291P is able to control the amount of current that passes between the source and the drain. As mentioned before, this is primarily used as a switch, where the gate voltage is used to open and close the switch.

At the heart of the FDZ291P lies the N-Channel. This is essentially an empty semiconductor channel, where electrons flow freely. When a negative voltage is applied to the gate, the electrons are attracted, and a positively charged N-Channel is formed. This essentially creates an electric field that controls the flow from source to drain.

When the gate voltage is increased, a greater current is allowed to flow. The FDZ291P offers excellent drain-source on resistance, and a bright and distinctive performance.

The FDZ291P is a simple and an effective way to incorporate low voltage switching into a circuit, and its unique characteristics make it suitable for a wide variety of applications. There is no doubt that this type of transistor is a strong and reliable option for circuit designers.

The specific data is subject to PDF, and the above content is for reference