Allicdata Part #: | FDZ208P-ND |
Manufacturer Part#: |
FDZ208P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 12.5A BGA |
More Detail: | P-Channel 30V 12.5A (Ta) 2.2W (Ta) Surface Mount 3... |
DataSheet: | FDZ208P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 30-WFBGA |
Supplier Device Package: | 30-BGA (4x3.5) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2409pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDZ208P is part of a family of Field Effect Transistors (FETs) which enables devices to be built that require a high level of performance. It is from the “Single” subcategory, meaning it has only one active terminal which determines its type of behaviour.
The FDZ208P has an insulated-gate construction where its conducting channel is formed between the gate and crossbar, giving its design a low on-resistance and an enhanced power level. It also has a wide dynamic range of continuous current and voltage, making it suitable for use in applications such as power supplies, converters, amplifiers and inverters.
Working Principle
FETs operate on similar principles to other transistors but instead of the traditional base-emitter-collector configuration of a bipolar junction transistor (BJT), FETs use a gate-drain-source configuration. This difference allows the FET to act like a controllable switch.
The FDZ208P\'s unique design utilizes a JFET type of field effect transistor which has its current control being determined by a voltage applied to the gate. This voltage is used to promote flow of current in the specified direction and also to prevent flow in the opposite direction. The source and drain of the FDZ208P are also commonly used to control the current between them. Together, this combination of source, gate and drain produces a high level of performance enabling the FDZ208P to be used in a wide range of applications.
When the voltage between the gate and source is low, the FDZ208P operates in the so-called ‘off-state’. Here, the current flow between the drain and source is very low. However, when the gate voltage is increased above the threshold voltage (VGS(TH)), the FDZ208P goes into the ‘on-state’, where the current flow is much greater.
The FDZ208P is particularly useful for its low power consumption, low threshold voltage and high gain. This combination of features makes it ideal for use in a variety of amplifier and power supply applications. For instance, it can be used to power LED displays, to regulate the supply of power to consumer electronics, or to amplify signals in automotive systems.
The FDZ208P family of field effect transistors are highly reliable devices that are suitable for a range of applications. They offer a low on-resistance and wide dynamic range which makes them an ideal choice for any design that requires a high level of performance.
The specific data is subject to PDF, and the above content is for reference
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