| Allicdata Part #: | FDZ206P-ND |
| Manufacturer Part#: |
FDZ206P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 20V 13A BGA |
| More Detail: | P-Channel 20V 13A (Ta) 2.2W (Ta) Surface Mount 30-... |
| DataSheet: |  FDZ206P Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | 30-WFBGA |
| Supplier Device Package: | 30-BGA (4x3.5) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4280pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 4.5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDZ206P is a N-channel Enhancement Mode Decade MOSFET, which is a type of Field-Effect Transistor (FET) that utilizes a Metal-Oxide-Semiconductor (MOS) structure. N-channel MOSFETs are transistors that use a negative-channel gate-source voltage to allow electrons to move through the channel and form the current. The FDZ206P is rated for a drain-source current of 3.1 amperes (A) and a drain-source voltage of 60 Volts (V). The device is hermetically sealed in a very rugged TO-244AA package, making it suitable for applications in harsh environments and with high-temperature tolerances.
The FDZ206P is a logical choice for many applications, especially those that require a high drain-source current capability. For example, this device is often used for high-power switching, motor control, and amplification. The device is also well-suited for other applications involving load switching, power management, and polarity protection.
The FDZ206P works on the principle of depletion and enhancement. When the gate voltage is increased above the threshold, the MOSFET is said to be in the "enhancement" mode. This causes the drain current to increase and the device characteristics to become linear. In the enhancement mode, a MOSFET can be used to amplify a signal. On the other hand, when the gate voltage is decreased below the threshold, the device is said to be in the "depletion" mode. In this mode, the drain current is reduced and the device characteristics become non-linear. In the depletion mode, a MOSFET can be used to attenuate a signal.
Overall, the FDZ206P is a high-performance MOSFET that is well-suited for many applications. Its ruggedness and high-temperature tolerance make it suitable for use in harsh environments. Additionally, its depletion and enhancement modes make it perfect for use as an amplifier or attenuator.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FDZ294N | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 6A 9-BGAN... |
| FDZ293P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 4.6A BGAP... |
| FDZ204P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 4.5A BGAP... |
| FDZ299P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 4.6A BGAP... |
| FDZ202P | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.5A BGAP... |
| FDZ203N | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 7.5A BGAN... |
| FDZ298N | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 6A BGAN-C... |
| FDZ206P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 13A BGAP-... |
| FDZ208P | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 12.5A BGA... |
| FDZ209N | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 4A 12-BGA... |
| FDZ291P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 4.6A BGAP... |
| FDZ201N | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 9A BGAN-C... |
| FDZ2553N | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 9.6A BGA... |
| FDZ2553NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 9.6A BGA... |
| FDZ2554PZ | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 6.5A BGA... |
| FDZ2554P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 6.5A BGA... |
| FDZ2040L | ON Semicondu... | 0.0 $ | 1000 | IC POWER DIST LOAD SWITCH... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...