FDZ299P

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	9-WFBGA
Supplier Device Package:	9-BGA (2x2.1)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.7W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	742pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	9nC @ 4.5V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	55 mOhm @ 4.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4.6A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FDZ299P Application Field and Working Principle

The FDZ299P is a single N-Channel enhancement-mode MOSFET (metal oxide Field-effect transistor). It is an intelligent power switch that is optimized for low voltage, low resistance systems, released by Fairchild Semiconductor. This device has wide applications that include battery and solar powered circuits, and especially in power management systems.

Applications

The FDZ299P has several applications that make it preferred over other FETs in many applications. These make it ideal for several applications such as battery powered devices, switch mode power supplies, voltage regulators and motor drivers. As it has a built-in Enhanced CR (current-limiting) safeguard and thermal shut down protection, it is suitable for such applications as LED lighting, LED driving and automotive applications. Moreover, its features such as enhanced load current, high-power dissipation, robust packaging, high quality material, soft-start enabling capability make this device a popular choice for many applications.

Description

The FDZ299P is a single N-Channel enhancement-mode MOSFET that has a Drain-Source breakdown voltage (BVDSS) of 200V, with an RDS(ON) of 0.30 Ω. The maximum load current that this device can carry is 6A. The device includes two power switches, where the Primary Switch (NMOS) is connected between the source and the output. The Secondary Switch (NMOS) is connected between the output and the ground. The gate threshold voltage (Vth) at which the device turns fully on is 2.5V. The maximum gate source voltage that can be applied on the FDZ299P device is 6V. The typical power dissipation of the device is 2.5 W at an ambient temperature of 25°C and it can withstand maximum operating temperature of 150°C.

Working Principle

The FDZ299P MOSFET is designed for low voltage, low resistance applications. It has a low on-state resistance of 0.30 Ω and a maximum load current of 6A. When the gate voltage of the device rises above the threshold voltage (Vth), the device turns on and allows current to flow from the drain to the source. The current then flows from the source to the output load through the Primary switch. When the gate voltage falls below the threshold voltage, the device turns off, and the current stops flowing from the drain to the source. The current then flows from the output load to the ground through the Secondary switch.

Conclusion

The FDZ299P is a single N-Channel enhancement-mode MOSFET with a low on-state resistance, an RDS(ON) of 0.30 Ω, and a maximum load current of 6A. Its features such as built-in Enhanced CR (current-limiting) safeguard and thermal shut down protection, enhanced load current, high-power dissipation, robust packaging, high quality material, and soft-start enabling capability make it a popular choice among battery powered devices, switch mode power supplies, voltage regulators and motor drivers. Furthermore, its working principle is based on the principle that when the gate voltage rises above the threshold voltage, the device turns on and the current flows from the drain to the source, and when the gate voltage falls below the threshold voltage, the current flows from the output load to the ground through the secondary switch.

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