Allicdata Part #: | FDZ293P-ND |
Manufacturer Part#: |
FDZ293P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 4.6A BGA |
More Detail: | P-Channel 20V 4.6A (Ta) 1.7W (Ta) Surface Mount 9-... |
DataSheet: | FDZ293P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 9-VFBGA |
Supplier Device Package: | 9-BGA (1.5x1.6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 754pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 4.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDZ293P is a field-effect transistor (FET) commonly used in the electronics sector. It is a single-channel JFET (Junction Field-Effect Transistor), equipped with an N-channel. This type of transistor finds many uses in applications such as voltage shifting, gain stages, switched amplifiers and signal buffers.
FDZ293P is an exceptional n-channel JFET due to its extremely low on-state resistance and good noise performance, making it an ideal choice for precision analog and switching applications. FDZ293P transistor also offers an impressive breakdown and continuous drain current as well as a wide operating temperature range and tight parameter distribution.
The working principle of the FDZ293P is relatively simple. It is composed of a source, drain, and gate electrodes, formed at the intersection of the two semiconductor layers. When a voltage difference is applied between the gate and source electrodes, a thin region of the depletion layer forms within the semiconductor channel, causing the channel resistance to increase. This, in turn, affects the movement of electrons through it, thereby controlling the source-to-drain current and regulating the output.
The FDZ293P transistor is mainly used in precision DC amplifiers and signal buffers, relay and solenoid drivers, voltage conversion circuits and switching applications. It is also used in gate shunting and gate driving circuits, pulse control, sample-and-hold circuits and low-frequency oscillators. Additionally, this transistor can be used in audio amplifiers, modulators, AF and RF amplifiers, pulse transformers and generators, light dimmers and switching power supplies.
The FDZ293P is a durable transistor with excellent performance in a variety of applications. It is a reliable device with a high JFET breakdown voltage and a wide operating temperature range, allowing it to be used in a variety of applications. Additionally, the device has a low gate-drain capacitance and low gate-source capacitance, allowing it to be used in high-frequency and high-speed designs. Overall, this transistor is a great choice for precision analog and switching applications.
The specific data is subject to PDF, and the above content is for reference
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