Allicdata Part #: | FGPF10N60UNDF-ND |
Manufacturer Part#: |
FGPF10N60UNDF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 20A 42W TO-220F |
More Detail: | IGBT NPT 600V 20A 42W Through Hole TO-220F-3 |
DataSheet: | FGPF10N60UNDF Datasheet/PDF |
Quantity: | 999 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 42W |
Supplier Device Package: | TO-220F-3 |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 37.7ns |
Test Condition: | 400V, 10A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 8ns/52.2ns |
Gate Charge: | 37nC |
Input Type: | Standard |
Switching Energy: | 150µJ (on), 50µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 30A |
Current - Collector (Ic) (Max): | 20A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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FGPF10N60UNDF is a type of IGBT of single chip design, which combines an N-channel MOSFET with complementary P-channel vertical MOSFETs. It has a high voltage rating, high current rating, and a wide frequency range. The FGPF10N60UNDF is designed to meet the demanding power requirements of the automotive, industrial, and consumer markets.
FGPF10N60UNDF is widely used in a range of applications such as motor control, power supplies, solenoid control, and many other power management requirements. It is suitable for high-speed, high-power switching applications in automotive, consumer, and industrial electronic systems.
The FGPF10N60UNDF is characterized by its low switching losses, high frequency operation, and simple gate drive requirements. Its low drive power and low thermal resistance make it suitable for operation in high temperature environments.
The FGPF10N60UNDF has a high blocking voltage of 600V, meaning that it can handle operating voltages of up to 600V. It also has a high current handling capacity of 10A, which makes it an ideal choice for high-current applications.
The FGPF10N60UNDF operates using a simple principle. When the gate voltage exceeds the threshold voltage, the N-channel MOSFET conducts. This current is then transferred to the P-channel MOSFETs which results in the device turning on. When the gate voltage is decreased below the threshold voltage, the device will turn off.
The device also has a number of protection features such as current limiting and overload protection which can help protect the device from damage. It also has a temperature protection feature which can help prevent the device from suffering from thermal overload.
Overall, the FGPF10N60UNDF is a powerful, reliable, and efficient IGBT of single chip design. Its high voltage rating and wide frequency response range make it suitable for a wide range of applications. Its simple gate drive requirements and low thermal resistance make it an ideal choice for operation in high temperature environments. Its protection features make it highly dependable and provide additional protection from damage.
The specific data is subject to PDF, and the above content is for reference
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