FGPF70N30TDTU Discrete Semiconductor Products |
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Allicdata Part #: | FGPF70N30TDTU-ND |
Manufacturer Part#: |
FGPF70N30TDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 300V 49.2W TO220F |
More Detail: | IGBT Trench 300V 49.2W Through Hole TO-220F |
DataSheet: | FGPF70N30TDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Switching Energy: | -- |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 21ns |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 125nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 49.2W |
Vce(on) (Max) @ Vge, Ic: | 1.5V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 160A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs (Insulated-Gate Bipolar Transistors) are a type of transistor that has a mixture of both bipolar transistor and insulated gate FET (MOSFET) technology. Since the switch is formed with separate but complementary elements, IGBTs can be used for high power applications that require fast switching times. The FGPF70N30TDTU is an IGBT monitor designed with fast switching, low energy output and high-output current capability.
Applications
The FGPF70N30TDTU has a wide range of applications in the industrial sector. It is used in a range of applications such as controlling power for industrial processes, automotive applications, and lighting systems. Additionally, it is also used in switching regulated power systems in renewable energy devices such as wind turbines, solar panels, and fuel cell systems. The FGPF70N30TDTU can operate either at frequencies of up to 800kHz or in continuous conduction mode, making it suitable for a wide range of specific applications.
Working Principle
The FGPF70N30TDTU is designed in a three-terminal package, with two terminals for power and one terminal for control (gate). The gate voltage applied to the IGBT must be between 10 and 20 Volts for proper operation, allowing it to be driven cleanly and accurately by most logic devices such as microprocessors and FPGAs. When the gate voltage exceeds the threshold level, the IGBT starts conducting, allowing current to flow between the two power terminals. Once the gate voltage reaches the gate threshold of the IGBT, the current will start to flow, causing the voltage at the two power terminals to start to drop. The current will continue to flow until either the gate voltage is removed or the maximum current is reached, at which point the IGBT turns off.
The FGPF70N30TDTU is capable of providing very fast switching speeds. This makes it ideal for applications such as power switching for high-power LED lighting and automotive systems that require very fast switching times. As an IGBT, the device is able to provide high current output levels with very low input current and energy levels, making it an efficient option for many applications.
The FGPF70N30TDTU is a useful device for controlling high-power applications. Its wide range of applications make it suitable for use in a large number of industrial, automotive and renewable energy systems. Its fast switching times and low energy output make it an efficient option for many applications. Its controlled operation makes it easy to integrate into most control systems, making it a versatile and reliable option.
The specific data is subject to PDF, and the above content is for reference
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