FGPF30N30TTU Discrete Semiconductor Products |
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| Allicdata Part #: | FGPF30N30TTU-ND |
| Manufacturer Part#: |
FGPF30N30TTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 300V 44.6W TO220F |
| More Detail: | IGBT Trench 300V 44.6W Through Hole TO-220F |
| DataSheet: |  FGPF30N30TTU Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | 0.00000 |
| Switching Energy: | -- |
| Base Part Number: | FGPF30N30 |
| Supplier Device Package: | TO-220F |
| Package / Case: | TO-220-3 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 200V, 20A, 20 Ohm, 15V |
| Td (on/off) @ 25°C: | 22ns/130ns |
| Gate Charge: | 65nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 44.6W |
| Vce(on) (Max) @ Vge, Ic: | 1.5V @ 15V, 10A |
| Current - Collector Pulsed (Icm): | 80A |
| Voltage - Collector Emitter Breakdown (Max): | 300V |
| IGBT Type: | Trench |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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FGPF30N30TTU Application Field and Working Principle
FGPF30N30TTU, manufactured by Fairchild Semiconductor, is a type of insulated gate bipolar transistor (IGBT). It has the characteristics of high-voltage tolerance, low conduction and switching losses as compared to other types of transistors, and provides high-frequency operation.
FGPF30N30TTU has wide range of applications in various fields such as industrial equipment, home appliances, smart grid, and automotive electronics. In industrial equipment and home appliances, it is used for motor control, AC and DC power conversion, and power factor correction. In smart grid, FGPF30N30TTU can be used for distributed power generation, energy storage, and renewable energy applications. Moreover, in automotive electronics it has usage for motor drive, traction inverter and DC/DC converter applications.
Working Principle
The FGPF30N30TTU IGBT module consists of an insulated gate and a bipolar transistor. The gate and base terminals form the switch and the emitter and collector form the current carrying path. When a voltage is applied to the gate terminals, electric current is allowed to flow and the IGBT is said to be "on". When the gate voltage is removed and the IGBT is off. Thus, FGPF30N30TTU can be used to control the flow of electrical current.
The FGPF30N30TTU has a PNP gate structure and its maximum collector current is 30 A. It also has a low gate saturation voltage and a high breakdown voltage. Moreover, it has a high switching speed and a low gate drive power loss, which makes it ideal for high-power, high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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