FGPF30N45TTU Discrete Semiconductor Products |
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Allicdata Part #: | FGPF30N45TTU-ND |
Manufacturer Part#: |
FGPF30N45TTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 450V 50.4W TO220F |
More Detail: | IGBT Trench 450V 50.4W Through Hole TO-220F |
DataSheet: | FGPF30N45TTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 50.4W |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 73nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.6V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 120A |
Voltage - Collector Emitter Breakdown (Max): | 450V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Integrated Gate-Bussed Thyristor (IGBT) transistors are considered as the modern version of BJT transistors, providing excellent performance and reliability, yet with low power losses. FGPF30N45TTU is a type of IGBT which offers high current handling capability, excellent switching performance and a wide operating temperature range. It is an ideal choice for applications like Power Inverters, AC Motor control, Wind Power Conversion and Automotive Inverters.
The FGPF30N45TTU is a large area device with a voltage rating of 600 volts and can handle a maximum current rating of up to 45A. The device has an on-state voltage of 5V and a gate-source voltage of 10V. It features a high junction temperature rating of 175°C, making it suitable for high temperature applications. The device has an avalanche energy rating of ue 100mJ and a diode reverse recovery time of 64ns. The device also features a short circuit withstand time of up to 4ms and a turn-on delay time of 20ns in a DC excited circuit.
The basic operating principle of the FGPF30N45TTU is similar to a regular BJT transistor, but an additional voltage is applied to the gate of the device to control the current flow through the device. This voltage is supplied through the Gate Control (GC) pin. When this voltage is applied, an electric field is created between the emitter and collector which results in the current flow. The electric field is directly proportional to the size of the voltage supplied at the GC pin.
The controls of the device are also quite easy to understand. When the voltage on the GC pin is applied, it will turn the device \'on\' and the current will start flowing from the emitter to the collector. When the voltage on the GC pin is removed, the device will turn \'off\' and the current flow will stop. This enables the device to be used for fast switching applications.
The FPGF30N45TTU can be used in a wide variety of applications such as uninterruptible power supplies, motor control, home appliance control, automotive applications, etc. It can also be used in high voltage switching and motor control applications. Its high current handling capability and compact size make it an ideal choice for high-power switching applications. The device is also capable of handling high surge current and has a robust design which allows it to withstand harsh operating environments.
Overall, the FPGF30N45TTU IGBT is a versatile device designed for high-power switching applications. It is highly reliable, has excellent switching performance and a low on-state voltage. It is also capable of handling high current and temperatures up to 175°C. This makes it an ideal choice for a wide range of applications in the industrial, automotive, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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