FGPF70N33BTTU Discrete Semiconductor Products |
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Allicdata Part #: | FGPF70N33BTTU-ND |
Manufacturer Part#: |
FGPF70N33BTTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 330V 48W TO220F |
More Detail: | IGBT Trench 330V 48W Through Hole TO-220F |
DataSheet: | FGPF70N33BTTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 48W |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 49nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 70A |
Current - Collector Pulsed (Icm): | 220A |
Voltage - Collector Emitter Breakdown (Max): | 330V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FGPF70N33BTTU Application Field and Working Principle
The FGPF70N33BTTU is an insulated gate bipolar transistor (IGBT) combining the characteristics of MOSFETs and bipolar junction transistors (BJT). It is regarded as one of the most popular power components in the market. The FGPF70N33BTTU is the single version of IGBT devices, and its main application field is power supply and motor control.
The basic working principle of FGPF70N33BTTU is relatively simple as it only requires two devices for operation: a MOSFET controlling the gate and a BJT controlling the base. In order to turn the device on, firstly a positive voltage is applied to the gate terminal, which then attracts the electrons from the N-type substrate (the source) to the P-type channel (the drain). This electrical field causes the P-N junction to become forward biased, so that the electrons from the N-type region can easily enter the P-type substrate. As the gate voltage increases, so does the electron current from the source to the drain. It is this electric current which eventually makes the FGPF70N33BTTU turn on and start to conduct electric current.
In order to turn the device off, the gate voltage is reversed, so that the electrons from the P-type base to the N-type substrate go to a lower energy level than before. This reduces the electric current from the source to the drain and stops the flow of electrons from the source to the drain, thus turning off the device. Furthermore, there is also a base voltage which is applied in order to control the flow of electrons from the base to the substrate. This voltage helps the device to maintain its off status without suffering from static breakdown.
All in all, the FGPF70N33BTTU is a powerful and reliable power switch which can be used in a variety of applications, including power supply and motor control. It is able to handle high current levels and can be easily turned on and off when necessary. The switch is cost-effective and efficient, making it the ideal solution for many power and motor control projects.
The specific data is subject to PDF, and the above content is for reference
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