FGPF4533

Series:	--
Packaging:	Tube
Part Status:	Obsolete
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	330V
Current - Collector Pulsed (Icm):	200A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 50A
Power - Max:	28.4W
Switching Energy:	--
Input Type:	Standard
Gate Charge:	44nC
Td (on/off) @ 25°C:	--
Test Condition:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F

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Introduction

The FGPF4533 is a single IGBT (Insulated Gate Bipolar Transistor) that is used for high frequency switching applications in power electronics and motor control systems. This type of transistor is suitable for applications such as DC-DC converters, uninterruptible power supplies (UPS), solar systems, and inverter power supplies. This article will discuss the application field and working principle of the FGPF4533.

Application Field

The FGPF4533 is a general-purpose IGBT with a voltage rating of 600V, low on-state resistance, and a fast switching time of 45ns. This makes it suitable for high-frequency switching applications, where high-speed, low-loss switching is required. The FGPF4533 is a great choice for DC-DC converters and UPS systems, as it has the ability to switch between 0V and 600V quickly, with minimal power loss. The FGPF4533 is also widely used in motor control systems, as it can provide fast and reliable power conversion, as well as high efficiency. It is often used in Electric Vehicle (EV) motor control systems, where it can provide highly efficient power conversion and fast switching times. The FGPF4533 can also be used for solar systems, as it provides a highly efficient, fast switching solution for solar inverters. Its fast switching times and low on-state resistance make it suitable for use in solar systems.

Working Principle

The FGPF4533 is an insulated gate bipolar transistor (IGBT), which is a type of switching transistor that combines the advantages of FETs (field-effect transistors) and bipolar transistors. An IGBT functions as a cross between an FET and a bipolar transistor, with the gate connection insulated from the other regions of the device.The FGPF4533 is a single IGBT, meaning that the device contains a single transistor with the gate insulation on the internal connection between the collector and the emitter. The FGPF4533 works in full conduction mode when the gate voltage is between 9V and 12V, and in the cut-off mode when the gate voltage is 0V. In full conduction mode, the FGPF4533 acts as an electronic switch, allowing current to flow between the collector and the emitter when the gate voltage is between 9V and 12V. The FGPF4533 has a low on-state resistance of 4.2mΩ, allowing for high efficiency power conversion.In cut-off mode, the FGPF4533 acts as an electronic switch, preventing current flow between the collector and the emitter when the gate voltage is 0V. The FGPF4533 is also a fast-switch device, with a switching time of 45ns, making it suitable for high-frequency switching applications. ConclusionThe FGPF4533 is a single IGBT that is suitable for high frequency switching applications in power electronics and motor control systems. It has a voltage rating of 600V, a low on-state resistance of 4.2mΩ, and a fast switching time of 45ns, making it suitable for applications such as DC-DC converters, UPS systems, motor control systems, and solar systems. The FGPF4533 works by using the gate voltage to change the operation mode, either allowing current to flow in full conduction mode or blocking current flow in cut-off mode.

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