FGPF70N30 Discrete Semiconductor Products

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The FGPF70N30 is a high-speed and high-temperature IGBT for industrial applications. It is a single IGBT, which means that it can be used in a variety of applications from small signals to large currents. The FGPF70N30 has a high switching speed, a low operating temperature, and a large power dissipation capability.

The FGPF70N30 is designed to work with a wide range of input voltages, and provides an output current rating of up to 70 A. This IGBT can handle high temperatures up to 175°C, enabling it to operate reliably in a range of industrial environments where traditional power semiconductor devices would not be suitable. It is particularly useful in the automotive industry, where it can be used to switch power in electric and hybrid vehicles.

The FGPF70N30 is built on a six layer high-voltage platform and uses a novel HVIC control structure to reduce noise and optimize di/dt immunity. The internal parasitic capacitance between collector and emitter is lower than most IGBTs, resulting in a slim profile that allows for higher density applications.

The FGPF70N30 is a great choice for applications that require speed and efficiency. Its excellent di/dt immunity means that it can handle sudden abrupt dv/dt and dt/dt load changes without triggering false output signals. The IGBT’s low loss table reduces power consumption and helps the system maintain high efficiency. And its high speed switch transients and low current consumption help minimize system losses.

The working principle of the FGPF70N30 is based on the principle of voltage control. When the input voltage reaches the gate threshold voltage and overcomes the negative gate-source resistance, the device starts to turn

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