FGPF45N45TTU Discrete Semiconductor Products

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FGPF45N45TTU is a popular practical IGBT (Insulated Gate Bipolar Transistors) from Fairchild Semiconductor. It is a single device rated 45 amps and 450 volts. It has already become popular in the field of motor control, AC drives, and industrial / secure power supplies.This product is suitable for continuous conduction mode. The maximum junction temperature of this device is 150 C and the maximum die temperature is 230 C. The active voltage drop of this device is 1.6 V/2.5 V/3.2 V. It has a maximum switching loss of 7.3 Watts and a thermal resistance of 1.56 C/W.

When using this device, the collector voltage has to be 28 V above the base voltage. The collector-emitter voltage has to be the same as the supply voltage. The collector current should never exceed more than 3.2×VCE(on). The maximum recommended value for capacitive load is 10uF when the collector-emitter voltage is applied to the device.

The FGPF45N45TTU is an N channel device. It is a four layer device that has its insulated gate connected to the collector and its bipolar junction connected to the emitter. It is designed for low saturation voltages and low on-state voltage drop, therefore making it more efficient than competitors.

The working principle of this device is based on the principle of Henrich Hertz. Hertz’s principle states that two charges will exert a force on each other when they are close enough, and this will cause a proportional change in the magnetic field response, an electrical current, and an electric field associated with each other. The FGPF45N45TTU works by using this same principle. The insulated gate is the charge that lies between the emitter and collector portions of the device. When a pulse of voltage is applied, the insulated gate conducts the electrical current, thus controlling the current flow between the emitter and the collector. The largest value of the current flow is called the breakover current.

The main application areas of the FGPF45N45TTU are motor control, AC drives, and industrial/ secure power supplies. It is also used in high frequency and remote control applications. It is used for switching applications and for controlling the current flow between the emitter and collector. It can also be used for power conversion applications as it offers a low on-state voltage drop and lower saturation voltages, thus making power conversion more efficient.

The FGPF45N45TTU is a popular practical IGBT device offering a wide range of features. Its working principle is based on the principle of Henrich Hertz, which states that two charges will exert a force on each other when they are close enough. It has a collector-emitter voltage of 45V and a collector-current of up to 45 amps. This device is suitable for continuous conduction mode and is used for motor control, AC drives, industrial/ secure power supplies, high frequency and remote control applications, and for power conversion.

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