FGPF4565 Discrete Semiconductor Products |
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Allicdata Part #: | FGPF4565-ND |
Manufacturer Part#: |
FGPF4565 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 30W TO-220F |
More Detail: | IGBT Trench Field Stop 650V 30W Through Hole TO-2... |
DataSheet: | FGPF4565 Datasheet/PDF |
Quantity: | 274 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 30W |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 400V, 30A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 11.2ns/40.8ns |
Gate Charge: | 40.3nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.88V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 170A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FGPF4565 is one of the latest IGBTs (Insulated Gate Bipolar Transistor) single devices released by Fairchild Semiconductor. It is a compact, low cost and high efficiency power device, compared to the other IGBTs. It is designed specifically for power factor correction (PFC) applications, and is the optimal solution for SMPS (switch mode power supply) applications providing high efficiency and low power dissipation, for a best in class performance.
The FGPF4565 is smaller than other IGBTs and has lower switching losses. It supports a breakdown voltage of 600 V and a collector-emitter voltage of 650 V. It also has a lower saturation voltage compared to previous generations of IGBTs and provides improved current gains and easier paralleling. Furthermore, this device has an improved turn – on characteristics and improved short current capability. It also has a higher noise immunity and is more suitable to use in a wide range of applications.
FGPF4565 is useful in many power application field including power factor correction, lighting, motor control, and heating applications. It also has a wide range of uses in many power applications such as power factor correction, Motor control, Heating, Lighting, and other high efficiency power topologies.
The working principle of FGPF4565 is based on the IGBT semiconductor structure. This device contains two main components, the main IGBT transistor, and a small bypass diode. The IGBT is a voltage controlled device and is used to switch the current between an input voltage and output voltage. The bypass diode is responsible for providing a low resistance path for the input current when the transistor is turned off. This ensures that the current is not lost but instead, redirected through the diode to the output.
The operational characteristics of FGPF4565 are determined by its voltage, current and temperature. When the voltage across the IGBT is high, the current flow is higher and the IGBT device operates more efficiently. Similarly, high temperature increases the IGBT’s efficiency and the device operates at higher performance. Thus, the FGPF4565 can provide greatly improved efficiency when used in power control applications.
In conclusion, FGPF4565 is a great device for power applications. It has a wide range of applications, from motor control to lighting and from power factor correction to heating applications. This device also has a great working principle which enables it to provide efficient operation for power control applications. Thus, the FGPF4565 is the ideal choice for applications that require improved efficiency and performance.
The specific data is subject to PDF, and the above content is for reference
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