FGPF30N30 Discrete Semiconductor Products |
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Allicdata Part #: | FGPF30N30-ND |
Manufacturer Part#: |
FGPF30N30 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 300V 46W TO220F |
More Detail: | IGBT 300V 46W Through Hole TO-220F |
DataSheet: | FGPF30N30 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Specifications
Switching Energy: | -- |
Base Part Number: | FGPF30N30 |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 39nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 46W |
Vce(on) (Max) @ Vge, Ic: | 1.5V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Description
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FGPF30N30 application field and working principle
Insulated Gate Bipolar Transistors (IGBTs) are used for a variety of applications, and are a popular choice for powerful switching devices. They are versatile, efficient, and extremely reliable. The FGPF30N30 is a single IGBT manufactured by Fairchild Semiconductor, and is most commonly used for moderate-power switching in a variety of automotive and industrial applications.The FGPF30N30 is a popular choice for its wide range of operating voltages, from 20 volts to 30 volts. This wide range of voltages makes the FGPF30N30 ideal for applications that require the control of both high and low voltage power sources. The device also has an on-state current rating of 30 amps and a maximum collector-emitter voltage of 1200 volts.The FGPF30N30 incorporates a number of features that make it well-suited to many applications. Its low on-state voltage drop, low gate drive power requirements, and high breakdown voltage, as well as its high surge current capability, make it an attractive choice in many switching applications. Additionally, the FGPF30N30 features a robust construction which ensures reliable operation over a wide range of temperatures.The working principle of the FGPF30N30 is relatively simple. The device consists of two semiconductor layers, one N-type and one P-type. The main current carrying layer is the N-type layer, with the P-type layer forming a "gate" between the two layers.When a voltages is applied to the gate, it inverts the electrical field between the layers and allows current to flow between them. When the gate voltage is removed, the electrical field is reverted back to its original state, and the device will cease to conduct.Due to this simple process, and its robust construction, the FGPF30N30 is ideally suited for automotive, industrial, and other medium power switching applications. It can function as a switch to precisely control high and low voltage current, and its low on-state voltage drop, low gate drive power requirements, high breakdown voltage, and high surge current capability make it an attractive choice.
The specific data is subject to PDF, and the above content is for reference
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