FJP5021O

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	500V
Vce Saturation (Max) @ Ib, Ic:	1V @ 600mA, 3A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 600mA, 5V
Power - Max:	50W
Frequency - Transition:	18MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	FJP5021

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IntroductionFJP5021O is a single, high-frequency, high-power, silicon lateral NPN transistor. It is an industrial grade transistor which is specifically designed to address current applications in microwaves. Its package integrates a Schottky diode connected in anti-parallel with the collector for protection.Design FeaturesFJP5021O offers a wide range of features including high power, high frequency, and high breakdown voltage. It also features an excellent thermal capacity and low capacitance. Furthermore, the transistor has a high-temperature resistance of up to 175°C. The device is ideal for use in high power applications, microwave power amplifiers and power switching applications. It has a low noise figure, have RF gains of up to 40 dB across the frequency range of 0.25 to 6 GHz, and it is extremely stable and reliable.Application FieldFJP5021O can be used in high performance communication systems such as NB-IoT and IoT. The device is also suited for mobile radio, radio base stations, and satellite communication systems. Furthermore, it can be used in distributed antenna systems, active antenna systems, backbone networks, and military communication systems.The device is primarily used in the following applications: High power amplifiers;Power switching; Transmitters;Receivers;Uninterruptible power supplies;Motor control;Voltage regulator modules;Charge pumps.Working PrincipleFJP5021O transistor works as a bipolar junction transistor (BJT), which is commonly known as a bipolar transistor. It conducts both majority carriers and minority carriers and has three terminals, namely the collector, base and emitter. The collector of the transistor acts as the input, which is relatively more negative than the base. This causes electrons to flow in the transistor from the emitter to the collector. The electrons are then steered by the electric field to the base, where they are divided and recombined. This causes some electrons to be injected into the collector and some to be injected into the emitter. Therefore, a voltage difference between the collector and the emitter is created. This voltage difference is responsible for the switching of the transistor and its amplification characteristics. The gain of the amplifier is determined by the ratio between the collector current and the base current.ConclusionFJP5021O is a high-power, high-frequency transistor that is specifically designed for industrial application. It has a wide range of features and applications including high-power amplifiers, power switching, transmitters, receivers, voltage regulator modules and charge pumps. Furthermore, it works as a bipolar junction transistor which has three terminals. The transistor is capable of conducting both majority and minority carriers and having a voltage difference between the collector and the emitter which is responsible for its switching and amplification characteristics.

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