Allicdata Part #: | FJP5021Y-ND |
Manufacturer Part#: |
FJP5021Y |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 500V 5A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 500V 5A 18MHz 50W Thr... |
DataSheet: | FJP5021Y Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 500V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 600mA, 5V |
Power - Max: | 50W |
Frequency - Transition: | 18MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | FJP5021 |
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The FJP5021Y is a single bipolar junction transistor (BJT) that is used in a variety of applications. It is a commonly used switching transistor with a PNP base. It is often employed as a replacement for NPN transistors in many applications due to its higher current ratings and lower voltage drops.
The FJP5021Y is often utilized in power amplifier circuits, radio frequency amplifiers, and switching circuits. Its unique PNP base configuration permits higher current levels and less dissipation, making it ideal for use in high-power applications. Additionally, the FJP5021Y is known for its high-frequency performance, allowing for greater signal frequency accuracy.
The FJP5021Y utilises a typical BJT architecture consisting of an emitter terminal, a base terminal, and a collector terminal. In an active circuit, a voltage is applied to the base terminal of the FJP5021Y, allowing for a current to flow from the emitter to the collector. When a current is supplied to the base terminal, it reactions with the charges from the base-emitter junction, causing a change in the collector-emitter current.
This changes results in a gain in the collector current, which is known as the current gain of the FJP5021Y. This current gain can range from 100 to 500, depending on the reverse bias of the emitter-base junction. As the reverse bias increases, the current gain increases, making it possible to operate the FJP5021Y at higher currents.
The FJP5021Y also has a fast switching speed, making it suitable for a wide range of applications. This includes digital logic circuits, pulse generators, and other high-speed logic circuits. Due to its unique junction structure, the FJP5021Y is able to respond quickly to changes in input current, allowing for faster switching times.
In addition, the FJP5021Y also features a high gain bandwidth product, allowing for higher signal bandwidth. This bandwidth is useful for amplifying high-frequency signals, allowing for higher transmission rates and better signal quality. The FJP5021Y also has a good transit frequency, allowing for high-speed switching of signals.
The FJP5021Y is a versatile transistor that is ideal for a variety of applications. Its high current ratings, low voltage drops, and fast switching speeds make it an ideal choice for high-power applications. Its unique junction structure allows it to respond quickly to changes in input current, making it suitable for digital logic circuits and pulse generators.
Furthermore, its high gain bandwidth product allows for higher signal bandwidths, making it suitable for amplifying high-frequency signals. Overall, the FJP5021Y offers excellent performance and is a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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