Allicdata Part #: | FJP5027R-ND |
Manufacturer Part#: |
FJP5027R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 800V 3A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 800V 3A 15MHz 50W Thr... |
DataSheet: | FJP5027R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 800V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 300mA, 1.5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 200mA, 5V |
Power - Max: | 50W |
Frequency - Transition: | 15MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | FJP5027 |
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Transistors - Bipolar (BJT) - Single
FJP5027R is a single-stage NPN bipolar junction transistor (BJT). It is classified as a transistor that consists of a single layer of doped semiconductor material and has three terminal junctions connecting the different layers or regions of this material. The terminals are identified as the base, collector, and emitter. A current applied to the base-collector junction results in a current flow from the emitter to the collector. This current is amplified at the collector and can be used as a signal source in various applications.
One of the major applications of the FJP5027R is in power amplifiers that are used for amplifying audio and video signals. The transistor also finds application in switching circuits and amplifying switching signals, voltage-amplifying analog-to-digital, digital-to-analog and pulse-width modulation applications. Other applications include in motor control, relay drivers, motor drivers, and motor speed control.
The working principle of the FJP5027R is based on the principle of junctions formed at the base, collector, and emitter. When a current is applied to the base, it creates a PNP of NPN type of junction, amplifying the current and causing it to flow through the emitter-collector junction. This in turn creates a voltage drop across the collector and emitter which can be used as a signal source.
The amplification of the base current is made possible by the transistor’s internal resistance properties. This is because the base acts as a current flow control and regulates the flow of current from the collector to the emitter. As the base current is amplified and forced through the emitter-collector junction, the voltage and resistance at the collector and emitter change, creating a feedback loop that can be controlled with the base current.
The FJP5027R also features an adjustable current gain that allows for greater control of the output signal. This can be used to regulate the gain and response of the amplifier or other application. When used in conjunction with other passive components such as resistors, capacitors, and inductors, the transistor can be used to provide controlled amplification over a wide range of frequencies.
In addition to its applications, the FJP5027R also has a number of advantages, such as its high power handling capabilities and the ability to efficiently handle high frequency signals. It is highly reliable and has a very low noise figure. It is also relatively inexpensive and readily available.
In summary, the FJP5027R is a single-stage NPN bipolar junction transistor (BJT) used in a range of applications. Its working principle is based on the principle of junctions constructed with the base, collector, and emitter. These junctions create a feedback loop that can be controlled with the base current, and an adjustable current gain allows for greater control of the output signal. Additionally, the transistor has a number of advantages, such as its versatility, high power handling capabilities and being relatively inexpensive and available.
The specific data is subject to PDF, and the above content is for reference
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