Allicdata Part #: | FJP5200OTU-ND |
Manufacturer Part#: |
FJP5200OTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 250V 17A TO-220AB |
More Detail: | Bipolar (BJT) Transistor NPN 250V 17A 30MHz 80W Th... |
DataSheet: | FJP5200OTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 17A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 800mA, 8A |
Current - Collector Cutoff (Max): | 5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 1A, 5V |
Power - Max: | 80W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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The FJP5200OTU is a silicon based Transistor-Bipolar (BJT)-Single. It is well suited to a wide range of industrial, consumer and commercial applications due to its superior performance. In this article, we will discuss the application field and working principle of the FJP5200OTU.The FJP5200OTU is a PNP transistor with a gain rating of 150-300. It has a nominal maximum collector current of 0.60 A, and a frequency response range of 0.7 to 4.0 MHz. The maximum power dissipation is 1.2 W, and the maximum operating temperature is 125°C. It is suitable for a variety of applications, such as switching and amplifiers.The FJP5200OTU is composed of three terminals, including the collector (C), emitter (E) and base (B) terminals. It works on the principle of controlled current flow. A small current passing through the base terminal is amplified, and passed to the collector terminal. This current is then linked to the emitter terminal, and the appropriate current direction and voltage are generated.The FJP5200OTU has a wide range of application. It can be used in amplifiers, switches, and other amplifier and switch applications. It is also suitable for amplifying and switching applications which require low power and high frequency operation. It can be used in applications such as audio amplifiers, logic gates and pulse motors.The device is also suitable for use in RF and microwave applications, such as RF amplifiers, modulators, mixers, detectors and oscillators. It is also commonly used in low noise amplifiers and other magnetic field applications.The FJP5200OTU is a highly reliable device, and is built using advanced technology. The device has excellent current gain (up to 150-300) and wide temperature range. It is also highly resistant to static electricity and other damaging environmental conditions. In summary, the FJP5200OTU is a common and highly reliable Transistor-Bipolar (BJT)-Single. It is well suited to a wide range of industrial, consumer and commercial applications due to its superior performance. It is composed of three terminals, namely the collector (C), emitter (E) and base (B) terminals. It works on the principle of controlled current flow. It is suitable for a variety of applications, such as amplifiers and switches, logic gates, RF and microwave applications, low noise amplifiers and other magnetic field applications. It has excellent current gain and wide temperature range, and is highly resistant to static electricity and other damaging environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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