FJP5021RV Allicdata Electronics
Allicdata Part #:

FJP5021RV-ND

Manufacturer Part#:

FJP5021RV

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 500V 5A TO-220
More Detail: Bipolar (BJT) Transistor NPN 500V 5A 18MHz 50W Thr...
DataSheet: FJP5021RV datasheetFJP5021RV Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Power - Max: 50W
Frequency - Transition: 18MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: FJP5021
Description

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The FJP5021RV bipolar junction transistor (BJT) is a single transistor used primarily for switching and amplification purposes. It is a three-terminal device capable of operating at very high frequencies and is well suited for a wide range of applications. The FJP5021RV is a medium-power general-purpose transistor that is often used in audio frequency (AF) amplifiers and power converters. It is characterized by its low noise, good linearity, and excellent gain.

The FJP5021RV is a low-cost BJT composed of two distinct layers: a base and a collector. The base is the central command center of the device, responsible for controlling the current flow between the collector and the emitter, which is the second terminal. The collector is the output terminal, which collects current from the base and delivers it to the load. The third terminal is the emitter, from which current flows from the collector to complete the circuit. The FJP5021RV has a maximum collector current rating (IC,max) of 500 milliamps (mA) and a maximum voltage rating (VCEO) of 25 volts (V).

When the FJP5021RV is used as a switching device, the transistor is driven in order to induce a high-density of electrons in the base, causing a decrease in the collector/emitter voltage (VCE) as current flows. In this state, the transistor is said to be operating in saturation. This occurs when the base-emitter voltage (VBE) is greater than the cutoff voltage (VCE). Conversely, when the transistor is used as an amplifier, the transistor is driven in a state known as cut off, which eliminates current flow through the device. In this state, base-emitter voltage (VBE) is less than the cutoff voltage (VCE).

The FJP5021RV is capable of operating at very high frequencies due to its high transconductance (gm). Its transconductance is a measure of the relationship between the input (base) current to the output (collector-emitter) voltage. Transconductance is a desirable characteristic in high-frequency amplifiers as it allows for better control of the current flow. The FJP5021RV is especially useful in amplifying high-frequency signals because it can switch quickly when needed.

The FJP5021RV has a wide range of applications due to its combination of low noise, good linearity, and excellent gain. It is typically used in signal amplifiers, audio frequency (AF) amplifiers, and power converters. It is also commonly used in the area of remote sensing, where it can be used to switch on and off radio frequency (RF) signals. Additionally, the FJP5021RV can be used to control the flow of current in circuit boards, as well as for switching and controlling various devices.

In summary, the FJP5021RV is a versatile, low-cost, bipolar junction transistor that is well suited for a wide range of applications. It is capable of operating at very high frequencies and is characterized by its low noise, good linearity, and excellent gain. The FJP5021RV is often used in audio frequency (AF) amplifiers, power converters, remote sensing systems, and circuit boards.

The specific data is subject to PDF, and the above content is for reference

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