Allicdata Part #: | FJP5021OTU-ND |
Manufacturer Part#: |
FJP5021OTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 500V 5A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 500V 5A 18MHz 50W Thr... |
DataSheet: | FJP5021OTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 500V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 600mA, 5V |
Power - Max: | 50W |
Frequency - Transition: | 18MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | FJP5021 |
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FJP5021OTU Application Field and Working Principle
The FJP5021OTU is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is one of the most popular transistors available in the market today, due to its cost-effective performance and high reliability. The device is RoHS compliant and has a low power consumption with a maximum voltage of 600V.
The FJP5021OTU can be used in a variety of applications, including amplifier circuits, switching circuits, and interface circuits. Its main features make it ideal for use in automotive, computer, consumer, and communication applications. Its low power consumption and its high voltage capability make it an excellent choice for DC-DC converter designs. It can also be used in low-noise, wide-range audio amplification stages, as well as in switching circuits for high-side or low-side applications.
The FJP5021OTU has an NPN die structure, which is designed to provide superior performance in both switching and linear applications. It features a low noise figure and a high input impedance at relatively low voltage levels. In addition, it has excellent thermal stability with a very low reverse transfer capacitance and high frequency response.
The working principle of the FJP5021OTU is based on the basic principles of a BJT. BJTs consist of two layers – an emitter and a collector. The emitter of a BJT is forward biased, which allows the current to flow from the emitter to the collector. This current flow is then amplified and the amplified signal is then output from the collector. The voltage across the base-emitter junction is responsible for this current flow and its magnitude is determined by the resistance of the BJT. When the base is forward biased, the current through the base-collector junction is increased, which increases the voltage drop across the external load.
The FJP5021OTU’s main usage— amplifying or switching signals—can be better understood by studying the transistor’s basic characteristics. These include: current gain (h fe ), current transfer ratio (h FE ), miller capacitance (CMR), transition capacitance (CTR), turn-on and turn-off times (t on and t off ), and input impedance (Z in ). The current gain of the FJP5021OTU is greater than 100, which is extremely high and allows it to be used in signal amplifiers. Its current transfer ratio (hFE) is also quite remarkable and can be used for switching applications. The miller capacitance (CMR) is also quite high, providing an additional performance boost for signal amplifiers. Additionally, the FJP5021OTU has excellent turn-on and turn-off times (t ON and t OFF ), which allows for fast switching and fast setup times in circuit designs.
In conclusion, the FJP5021OTU is a highly reliable, cost-effective NPN bipolar junction transistor that can be used for a variety of applications, including amplification and switching. Its low power consumption makes it suitable for DC-DC converters, and its high voltage capability and low noise figure makes it ideal for audio amplification and signal switching. Its main characteristics, such as its current gain, current transfer ratio, and miller capacitance, make it an excellent choice for all sorts of electronics designs.
The specific data is subject to PDF, and the above content is for reference
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