Allicdata Part #: | FJP5200RTU-ND |
Manufacturer Part#: |
FJP5200RTU |
Price: | $ 1.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 250V 17A TO-220AB |
More Detail: | Bipolar (BJT) Transistor NPN 250V 17A 30MHz 80W Th... |
DataSheet: | FJP5200RTU Datasheet/PDF |
Quantity: | 409 |
1 +: | $ 1.10250 |
10 +: | $ 0.98784 |
100 +: | $ 0.79424 |
500 +: | $ 0.65255 |
1000 +: | $ 0.54069 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 17A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 800mA, 8A |
Current - Collector Cutoff (Max): | 5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 55 @ 1A, 5V |
Power - Max: | 80W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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FJP5200RTU is a single bipolar junction transistor (BJT), a type of transistor which uses one P–N junction to control current. It is used in a variety of applications, such as amplifiers and switching applications. In this article we\'ll look at the FJP5200RTU and its applications and working principle.
The FJP5200RTU is a high-voltage, high-current BJT. It has an emitter-base voltage (VBE) of up to 10V and a current gain (hFE) of up to 100. The transistor is rated for a maximum collector-emitter current of 12 amps, and a maximum power dissipation of 40 watts. It is a type of NPN BJT, meaning that when there is a positive voltage applied to the base of the transistor, the current flow from the collector to the emitter increases.
The FJP5200RTU is suitable for power switching applications, including motor control and audio amplification circuits. It is also suitable for signal conditioning, such as signal filtering, voltage amplification, and providing impedance matching. Additionally, these transistors can be used for DC motor control, pulse width modulation (PWM) for speed control, speeder motor starter circuits, and signal processing.
Apart from its applications, understanding the working principle of the FJP5200RTU is important. This transistor is a NPN type of BJT, which means that it operates using the negative-positive-negative (NPN) biasing technique. When a positive voltage is applied to the base of the transistor, it causes electron current to flow through the base-emitter junction, causing electrons to flow from the base to the emitter. This increases the current flow through the collector-emitter junction, resulting in an amplified current amplitude.
How the NPN transistor works can be best understood by looking at the symbol for the PN junction. The arrow points in a certain direction es show the polarity of current flow. The base is the control element, and the arrows indicate the direction of the current flow when the base is forward biased. When the base is biased, electrons move from the base towards the emitter, and are then allowed to move from the emitter to the collector, thus providing an amplified signal.
The FJP5200RTU is a useful transistor for amplifier and control circuit applications, due to its high current gain, high voltage saturation and high power dissipation. Understanding the working principle and applications of this transistor is essential for its successful implementation in any circuit design or project. It is also important to consider the maximum ratings of the transistor before using it, in order to ensure its safe and effective operation.
The specific data is subject to PDF, and the above content is for reference
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