FJP5027OTU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	800V
Vce Saturation (Max) @ Ib, Ic:	2V @ 300mA, 1.5A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 200mA, 5V
Power - Max:	50W
Frequency - Transition:	15MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	FJP5027

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FJP5027OTU Application Field and Working Principle

The FJP5027OTU is a bipolar junction transistor (BJT) featuring a maximum voltage rating of 600V. It is a single device that is typically used for audio amplification applications in consumer electronics and audiovisual equipment. It can also be used in switching and signal modulation applications.

Description

The FJP5027OTU is a single bipolar junction transistor (BJT). The device is manufactured by Fairchild Semiconductor and is available in various forms; including a TO-220 (plastic) package. It features a collector-emitter voltage rating of 600V, a collector current rating of 150mA and an emitter current rating of 600mA. The device features a rated Collector-Base Breakdown Voltage of 70V, which is the gate voltage required to turn the device off, and a rated Collector-Emitter Saturation Voltage of 0.1V, which is the maximum voltage drop that can occur across the collector-emitter junction when the device is turned on. The device also features a Beta (hFE) between 40 and 160, which is the ratio of the collector current to the base current.

Application Field

The FJP5027OTU is typically used for audio applications such as audio amplifiers in televisions, audiovisual equipment and other consumer electronics. The device is also suitable for switching and signal modulation applications due to its relatively low saturation voltage.

Working Principle

The basic operation of a bipolar junction transistor (BJT) is based on the principle of current amplification. A small amount of current entering the base of the transistor is amplified by the gain of the device (hFE) and results in a much larger current flowing from the collector to the emitter. This amplification of current results in a corresponding rise in voltage across the load connected between the collector and the emitter.The voltage at the base is the controlling factor in a BJT and is often referred to as the gate voltage. By changing the gate voltage, the amount of current flowing between the collector and emitter can be controlled, resulting in a corresponding rise or fall in voltage across the load. This allows the FJP5027OTU to be used in a variety of audio, switching and signal modulation applications.

Conclusion

In conclusion, the FJP5027OTU is a single bipolar junction transistor (BJT) suitable for audio amplification, switching and signal modulation applications. The device features a maximum voltage rating of 600V and a collector-emitter saturation voltage of 0.1V. The device works on the principle of current amplification, with the base voltage acting as the controlling factor. As such, the FJP5027OTU is an ideal choice for audio, switching and signal modulation applications.

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