Allicdata Part #: | FJP5304D-ND |
Manufacturer Part#: |
FJP5304D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 4A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 70W Through ... |
DataSheet: | FJP5304D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500mA, 2.5A |
Current - Collector Cutoff (Max): | 250mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 2A, 5V |
Power - Max: | 70W |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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The FJP5304D is a single bipolar junction transistor (BJT) capable of handling currents up to a peak of 2A. It is typically used to switch or amplify current in digital and analog signals. The FJP5304D is compliant with the JEDEC MO-127 two-pin plastic package. This package is known to be the industry standard for BJT transistors, allowing the easy handling and storage of electronic components.
A BJT is a semiconductor device composed of three regions: emitter, collector, and base. A BJT is normally used as an amplifier or a switch. In an amplifier configuration, a small current developed in the emitter-base circuit is amplified by the collector current.
There are two configurations of BJTs. The first is the n-p-n configuration, where the emitter and collector regions are both n-type while the base region is a p-type material. This configuration is normally used for amplification and is the type of BJT the FJP5304D is based on. The second configuration is the p-n-p configuration, where the emitter and collector regions are both p-type and the base region is an n-type material. This configuration is used as a switch and is less common.
The FJP5304D is a medium power transistor with an operating voltage range of -40V to +150V. It features a maximum DC current gain of 200, a collector-base breakdown voltage of 200V, a collector-emitter breakdown voltage of 200V, and an emitter-base breakdown voltage of 4V. It also has a maximum PNP saturation voltage of 300mV and a maximum NPN saturation voltage of 120mV.
The FJP5304D is mainly used in medium and low power applications such as amplifiers, signal switching, motor and solenoid control, and automotive signal management. It is also used in high power applications such as power supplies, audio amplifiers, and power switching. In all these applications, the FJP5304D provides excellent signal stability and high performance.
The FJP5304D is a high-quality transistor that offers superior performance and long-term reliability. It is easy to assemble, highly reliable, and provides excellent signal stability. It is also highly resistant to static, dust, and shock. All these features make the FJP5304D an ideal choice for a wide range of industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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