FJP5304DTU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max):	250mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 2A, 5V
Power - Max:	70W
Frequency - Transition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

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Introduction

FJP5304DTU is a single vertical-type NPN transistor, designed to work in various applications. It consists of a base, collector and emitter, and is typically used as an amplifier in high-current, high-voltage, and/or high-frequency.

Features and Benefits

FJP5304DTU is designed to work in various applications. It has high breakdown voltage, high power capability, and high switching speed. It also features low saturation voltage, low on-state resistance, low power dissipation, and high collector-base capacitance. It is also capable of working in high-current, high-voltage, and high-frequency circuits. Furthermore, its small package size and weight allow for easy installation and reduced board space.

Typical Applications

FJP5304DTU has many applications in areas such as high-power switching, class-D audio amplifiers, digital amplifiers, and inverters. Its high breakdown voltage capability also allows it to be used in high-voltage applications. It can also be used in various motor control applications, such as motor inversion, motor speed control, and position control applications. Additionally, the transistor can be used in high-frequency applications, such as RF power amplifiers and RF switches.

Working Principle

The FJP5304DTU is an NPN bipolar junction transistor. It consists of a base, collector and emitter. When a voltage is applied to the base, the electrons from the emitter are attracted to the base and create a current between the base and emitter. The current between the base and emitter increases as the voltage applied to the base increases. This current also flows between the base and collector, and increases as the voltage applied to the base increases. As the voltage applied to the base increases, the current flowing between the base and collector increases more and eventually reaches a saturation point. At this point, the current between the base and collector no longer increases and is equal to the current between the base and emitter. This is how the FJP5304DTU operates as an amplifier and can be used in high-current, high-voltage, and/or high-frequency circuits.

Conclusion

FJP5304DTU is a single vertical-type NPN transistor with many features and benefits. It has high breakdown voltage, high power capability, and high switching speed. It can be used for various applications, including high-power switching, class-D audio amplifiers, digital amplifiers, and inverters. Additionally, it can be used in motor control, and high-frequency applications. The working principle of the FJP5304DTU is based on the attraction of electrons from the emitter to the base, which results in current flowing between the base and collector and eventually reaching a saturation point. Overall, the FJP5304DTU is an ideal choice for many applications.

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