| Allicdata Part #: | FMMT634QTADITR-ND |
| Manufacturer Part#: |
FMMT634QTA |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS NPN DARL 100V 0.9A SOT23-3 |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 900... |
| DataSheet: |  FMMT634QTA Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.15314 |
| 6000 +: | $ 0.14258 |
| 15000 +: | $ 0.13730 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 900mA |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 960mV @ 5mA, 1A |
| Current - Collector Cutoff (Max): | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 100mA, 5V |
| Power - Max: | 806mW |
| Frequency - Transition: | 140MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23 |
Description
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FMMT634QTA is a Bipolar Transistor (BJT) Single device made by Fairchild Semiconductor. The device has NPN transistor and low current (Ic) rating making it suitable to use in applications that require switching and signal amplification. It is also used in applications such as consumer electronics, automotive, telecommunications, and building systems.The applied voltage to the device determines if the device is in forward- or reverse-bias mode.In forward-bias mode, when a positive voltage is supplied to the base terminal, the electrons pass or are injected from the base to the collector, creating a current flow. This is called a forward-biased part. In reverse-biased mode, when a negative voltage is supplied to the base terminal, the electrons are repelled away from the collector and the device can no longer be said to be conducting. In this mode, it is called a reverse-biased part.The FMMT634QTA is a BJT single device that is made with a Bipolar NPN transistor. Its base-emitter voltage (Vbe) is twice the collector-emitter voltage (Vce). It has a current gain of 310 and a Low VCE (saturation) of 0.3 V. Its low supply current and low current requirements make it suitable for low-current applications such as switch or signal amplification.The FMMT634QTA is capable of operating at a wide range of voltages from 30V to 100V. The Low VCE(SAT)of 0.3V means no voltage drop is needed and the device can be used in applications with a lower power requirement. Similarly, the low supply current and low current requirements also make it suitable for low-power applications.In addition to its low-power requirements, the FMMT634QTA has excellent linearity and stability during operation. This makes it suitable for a range of applications that require low-noise operation. The low-noise performance is achieved by using a no-feedback structure, which ensures that the gain remains constant throughout the operation.Finally, the FMMT634QTA has an excellent power dissipation of 55mW. Furthermore, its high breakdown voltage of 100V means it can handle high voltage applications with ease. These features make it suitable for use in a wide range of applications, from consumer electronics to automotive and telecommunications.In summary, the FMMT634QTA is a single Bipolar Transistor (BJT) device made by Fairchild Semiconductor. It has a NPN structure and a number of features that make it suitable for use in low-power applications. These include its low VCE(SAT), low supply current requirements, excellent linearity and stability, no-feedback structure and its high breakdown voltage. It is therefore suitable for a wide range of applications, including consumer electronic products, automotive, building systems, and telecommunications.
The specific data is subject to PDF, and the above content is for reference
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