Allicdata Part #: | FMMT723QTADITR-ND |
Manufacturer Part#: |
FMMT723QTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 1A 200MHz 625mW ... |
DataSheet: | FMMT723QTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 330mV @ 150mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 500mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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The FMMT723QTA is a single transistor bipolar junction transistor (BJT) transistor. It is a rugged and versatile surface mount device, suitable for a variety of applications. It is a general-purpose switch and is widely used in various applications where it can provide a large current gain with a very low voltage drop. It has a good hFE, a low VCE(sat), a low thermal resistance and an excellent power dissipation capability.
The FMMT723QTA is a widely-used NPN switching-type BJT. It is a surface mount device, made with a silicon NPN mono-lithic polarity structure. It is commonly used in circuit switching applications and high speed switching applications. It is characterized by its wide operating voltage range, low-noise characteristics, high reliability, and high speed switching characteristic.
The FMMT723QTA has a maximum collector-emitter voltage of 40V. It can provide a very good current gain (hFE). The BE saturation voltage is typically 0.72V and the B-E reverse current is max. 10µA. Its power dissipation capability is rated at 200 mW. It has an excellent thermal resistance, low-power dissipation, and an acceptable current-gain hFE.
The FMMT723QTA has two pins - collector (C) and emitter (E) - and the base electrode is internally connected. It is available in three sizes (SOT-223, SMA-DIP, and SOT-23-8) to provide flexibility in design and applications. In addition, it has a low cost and a low thermal resistance. It can provide a wide range of load current and low leakage current.
The FMMT723QTA is widely used for switching applications such as power supplies, motor switching, and relays. It has a wide range of operating voltages and current gains, making it suitable for use in a variety of circuitry. It has good switching characteristics and a low power consumption. It can provide a low power consumption and low heat generation, making it suitable for applications where size and power consumption are a priority.
The working principle behind the FMMT723QTA is simple. When it is placed between two connected circuits, current flows from the collector to the emitter when a small positive voltage is applied between the base and the emitter. This current induces a voltage at the collector, which is proportional to the base-emitter current. This induced voltage causes a current to flow from the collector to the base, which is known as the base current. The base current reduces the voltage at the base, and this in turn reduces the current flowing from the collector to the emitter. The FMMT723QTA thus acts as a switch, allowing the two connected circuits to be controlled by the voltage applied to the base.
In conclusion, the FMMT723QTA is a popular single-transistor bipolar junction transistor that is used in a wide range of applications such as motor switching and power supplies. Its wide operating voltage range, wide current gain range, low-power dissipation, and low-noise characteristics make it suitable for many applications. It has a low collector-emitter voltage and a low base-emitter voltage; this makes it efficient in power applications. The FMMT723QTA is an ideal choice for switching-type BJT applications where size and power consumption are critical.
The specific data is subject to PDF, and the above content is for reference
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