Allicdata Part #: | FMMT494QTC-ND |
Manufacturer Part#: |
FMMT494QTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 120V 1ASOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 1A 100MHz 500mW ... |
DataSheet: | FMMT494QTC Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 250mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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The FMMT494QTC is a small-signal NPN switching transistor with an transistor outline (TO-236AB) package. It is a small-signal NPN transistor that is commonly used in digital and switching applications such as in remote control circuits, motor controls, and digital logic circuits.
The FMMT494QTC transistor is able to operate over a wide range of voltage and current requirements. The transistor has a continuous current rating of 1.5 amps and a pulse peak current of 1.75 amps. It has a voltage rating of 30 volts and a rated collector-emitter voltage of 20 volts. The FMMT494QTC has an on-state collector-emitter saturation voltage of 0.4 volts and a turn-off delay time of 50µS. The transistor is designed to be operated at junction temperatures of up to 150°C.
The FMMT494QTC is a single NPN transistor that is used as a basic switching and amplifier device. It consists of three parts, the collector, the base, and the emitter. The collector and emitter of the transistor are the two main terminals and are connected to the power source. The base is the connection between the collector and emitter and is the control terminal of the transistor. When voltage is applied to the base, it allows a large current to flow from the collector to the emitter. This action serves to either switch a load on or off.
The working principle of an NPN transistor is based on its internal structure. The majority of NPN transistors are composed of a semiconductor material with two layers of different doped semiconductor materials – one p-type semiconductor material and one n-type semiconductor material. The base is formed by the p-type material sandwiched between the two n-type materials. When voltage is applied to the base, it causes electrons to be attracted to the positively charged base. This action causes charge carriers to move from the collector to the emitter, resulting in current flow from the collector to the emitter.
The FMMT494QTC is used in a wide variety of applications, including but not limited to, remote control circuits, alarm systems, switching power supplies, high-end audio amplifiers and motor controls. The FMMT494QTC is a robust transistor and can withstand higher operating temperatures compared to its predecessor, the 2N5401. It has a low forward voltage drop and high reverse breakdown voltage. It also features a high switching speed and can be used in power supplies, inverters and motor controllers.
In conclusion, the FMMT494QTC is a small-signal NPN switching transistor with an TO-236AB package. It consists of three terminals, the collector, the base and the emitter, and operates based on the movement of charge carriers from the collector to the emitter when voltage is applied to the base. The transistor is commonly used in digital and switching applications and can operate at high temperatures and operate for a long time without damage. The FMMT494QTC is an excellent choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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