FMMT591TC

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 5V
Power - Max:	500mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	FMMT591

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The FMMT591TC is a single-bipolar transistor with a wide range of applications and great performance. Its versatile design and powerful performance make it ideal for a variety of applications. This article will illustrate the application fields of the FMMT591TC and its operation.The FMMT591TC is a typical NPN bipolar transistor. It has a collector-emitter voltage rating of 30V and a maximum collector current of 500mA. It has a low saturation voltage of Vce(sat) at 0.25V and a high hFE of 250 at Ic = 0.2A. It has a wide frequency range from dc to 200MHz. It is small in size, making it suitable for high density SMD applications.The FMMT591TC offers a wide range of capabilities for various design needs. It is commonly used in amplifiers, oscillators, and switch circuits. In amplifiers, the FMMT591TC is used to increase the gain of an AC signal and reduce the amplitude of a DC or low frequency signal. It works by allowing current to flow from the collector to the emitter, resulting in a much stronger output signal. Oscillators use the FMMT591TC as an active element to oscillate waves with a certain frequency and stability. The transistor switches on and off in a controlled manner, making it an effective device for a variety of switching applications.The FMMT591TC\'s working principle is traced back to its basic operation. When a current is made to pass through the base terminal, majority carriers, electrons and holes, accumulate in the base-emitter junction region. This increase of charge carriers in the junction will create an inward electric field. This field in turn creates a voltage drop between the collector and the emitter contacts. This voltage drop is known as the forward collector-emitter voltage or Vce. With a sufficiently high base current, the transistor will pass through saturation, allowing higher current to flow from the collector to emitter.In addition to having a wide range of applications, the FMMT591TC is also very easy to use and maintain. The package includes simple instructions that provide easy-to-follow instructions on how to use the transistor. The design of the FMMT591TC is also robust, giving it a long lifespan. The chip has no moving parts, making it virtually maintenance free.In summary, the FMMT591TC is a single-bipolar transistor widely used for its versatility and performance. It has a wide range of applications and is a strong performer. Its Vce(sat) of 0.25V and a maximum hFE of 250 make it suitable for precise design requirements. It also has a low maintenance design and a wide frequency range up to 200MHz.

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