FMMT619-G Allicdata Electronics
Allicdata Part #:

641-1791-2-ND

Manufacturer Part#:

FMMT619-G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: NPN TRANSISTOR 2A 50V SOT-23 ROH
More Detail: Bipolar (BJT) Transistor NPN 50V 2A 100MHz 350mW S...
DataSheet: FMMT619-G datasheetFMMT619-G Datasheet/PDF
Quantity: 15000
3000 +: $ 0.05107
6000 +: $ 0.04596
15000 +: $ 0.04086
30000 +: $ 0.03830
75000 +: $ 0.03405
Stock 15000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 350mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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The FMMT619-G is a modern-day versatile NPN bipolar junction transistor (BJT) with a wide range of uses. This transistor is in the small-signal transistor class, suitable for audio applications and can also drive small loads.

A BJT is a semiconductor device with three terminals, composed of two regions of different types of semiconductor materials: the base region and the two emitter regions.

The function of the base region is to control the current flow from the emitter region to the collector region. The transistor operates in two states, which are known as “cut-off state” and “active/saturation state”. In the firstit is no current flow between collector and emitter regions; while in the second, the base-collector junction is forward-biased, allowing current to flow.

The FMMT619-G provides low input bias current, high gain bandwidth product, low noise, fast switching speed, and high current carrying capacity, in addition to its high DC Current Gain of 200. It is also compression molded with high reliability and low cost.

The main application field of the FMMT619-G is in audio amplifying circuits. This includes small power amplifiers, as well as high gain amplifiers for recording and audio frequency response curves. It can also be used for matching low-impedance speakers and headphones. It is also suitable for small load switching applications and digital circuits.

In terms of its working principle, the FMMT619-G functions as an amplifier by increasing the current gain between the base and the collector. This is done by taking the input signal from the base and amplifying it by using the gain from the collector. When the base current increases, the collector current increases, which causes the output voltage to increase. Conversely, when the base current decreases, the collector current also decreases, resulting in a decrease in the output voltage.

The current gain of the FMMT619-G is dependent on the amount of current flowing through the base region. The higher the current, the higher the gain and the stronger the output signal. The current gain of the FMMT619-G is usually around 200, meaning that a small current applied to the base can produce a large output voltage.

The FMMT619-G is a convenient and cost-effective NPN bipolar junction transistor for general-purpose audio applications. Despite being a low-power transistor, it is able to provide excellent signal amplification and can be easily incorporated into circuits that require a high gain, fast switching and low noise. Thanks to its features, it can also be used for a variety of other applications.

The specific data is subject to PDF, and the above content is for reference

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