Allicdata Part #: | FMMT451TC-ND |
Manufacturer Part#: |
FMMT451TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 1A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 150MHz 500mW S... |
DataSheet: | FMMT451TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 15mA, 150mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMT451 |
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,The FMMT451TC is a PNP high-speed switching transistor. It is a single component, bipolar junction transistor, otherwise known as a BJT. This low-cost and highly reliable component is available in a standard through-hole package, making it ideal for use in both prototyping and manufacturing applications, as it makes for easier insertion into a circuit board than its surface mount equivalent.
The FMMT451TC has a range of useful characteristics, such as a collector-emitter voltage (VCEO) of 45V, an IC rating of 400mA, and an hFE rating of 500 minimum.
The number of possible applications for this transistor is nearly endless. It can be used in potential projects such as a motor control circuits, a fire alarm system circuits, or even a temperature controller. It is also ideal for low-power switching applications, as it has a low on-resistance and a fast switching time.
The FMMT451TC transistor operates using the basic principle of PNP bipolar junction transistors. In a PNP system, the base-emitter junction is positively biased, while the base-collector junction is negatively biased. This allows current to flow between the base and collector terminals in order to activate the transistor. As the current flowing through the base-emitter junction increases, it causes the base-collector junction to become positive and allows current to flow freely between the collector and emitter terminals.
The FMMT451TC also has a unique construction that helps to reduce power consumption and noise. It is comprised of two layers, each layer consisting of two half-cells that are connected in parallel with each other. This parallel connection allows the device to handle more current, as well as improve the speed of switching when compared to other types of transistors.
The FMMT451TC also comes with an integrated circuit that can be used to monitor the current in the transistor, as well as a thermal protection feature that will automatically shutdown the transistor if it exceeds its specified temperature limit. This can be useful in controlling the temperature of the circuit, as well as protecting the transistor from damage. Additionally, this transistor has a low leakage current and is capable of dissipating up to 400mA.
In summary, the FMMT451TC is an excellent choice for low-power switching applications due to its high-speed switching, low on-resistance, and low thermal dissipation. It is available in a standard through-hole package, which makes it well-suited for both prototyping and manufacturing applications. Its unique construction helps reduce power consumption and noise, and its integrated circuit makes it easy to monitor and protect the transistor. Overall, the FMMT451TC is versatile and reliable, making it a great option for any design.
The specific data is subject to PDF, and the above content is for reference
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