FMMT494QTA Allicdata Electronics
Allicdata Part #:

FMMT494QTADITR-ND

Manufacturer Part#:

FMMT494QTA

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: NPN TRANSISTOR120V SOT23
More Detail: Bipolar (BJT) Transistor NPN 120V 1A 100MHz 500mW ...
DataSheet: FMMT494QTA datasheetFMMT494QTA Datasheet/PDF
Quantity: 1000
3000 +: $ 0.10154
6000 +: $ 0.09538
15000 +: $ 0.08923
30000 +: $ 0.08184
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Power - Max: 500mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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FMMT494QTA application field and working principle

The FMMT494QTA, a small signal switching/amplifying transistor, is mainly used in amplifying and switching circuits, such as amplifiers, adjustable current sources, and circuits that require switching between different voltages and levels of current. This transistor can be categorized as a single bipolar junction transistor (BJT) or a BJT with two terminals.

The two main terminals of a FMMT494QTA are Collector and Base. The emitter is a small piece of metal connected to the base which conducts electrons in and out of the BJT. The base-emitter junction has a low impedance and acts as a near ideal voltage source. When a voltage is applied across the base-emitter junction, electrons will be attracted to the base, producing a small current in the collector-base junction. This current can be increased by increasing the voltage across the base-emitter junction, increasing the complexity of the entire circuit.

The collector of a FMMT494QTA BJT is responsible for the majority of the current flow in the device, as it is effectively a forward-bias diode between the emitter and the collector, allowing for high current flow in a single direction. The base is responsible for controlling the current flow by controlling the forward bias potential, and with careful manipulation, even a very tiny input current can be amplified to large currents, depending on the design of the circuit.

The main application of a FMMT494QTA is in amplifying or switching circuits, such as amplifiers, adjustable current sources, and circuits that require switching between different voltages and levels of current. Due to the high gain of a FMMT494QTA, it is often used to boost a small electrical signal to a larger one in order to amplify the signal. It can also be used as a switch in circuits where a certain level of control over the current is required.

The FMMT494QTA is a great choice for applications that require high current flow with controlled current control. The low impedance of the base-emitter junction provides an ideal voltage source for amplifying and switching circuits, enabling the voltage to be accurately controlled. The high gain of the device also allows for the amplification of a small input current to a larger one, making it an ideal choice for use in amplifying circuits.

The specific data is subject to PDF, and the above content is for reference

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