Allicdata Part #: | FMMT722TR-ND |
Manufacturer Part#: |
FMMT722TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 70V 1.5A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor PNP 70V 1.5A 200MHz 625mW... |
DataSheet: | FMMT722TA Datasheet/PDF |
Quantity: | 938 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 70V |
Vce Saturation (Max) @ Ib, Ic: | 260mV @ 200mA, 1.5A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMT722 |
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FMMT722TA transistors, categorized under Transistors - Bipolar (BJT) - Single can be used for numerous purposes. They are small signal transistors, used for higher current gain, higher switching speeds, and improved frequency response.
FMMT722TA presents several types of applications. The standard applications include reverse-bias protection, amplifier circuits, and motor control applications. They can also be used as low-current drivers to drive relays and other light-duty loads. Moreover, they are also often utilized as switches in amplifiers, oscillators, and other circuits.
As for the FMMT722TA working principle, it must be said that it mainly operates through the emission of electrons. The transistor is comprised of an emitter, a collector and a base. When the base-emitter junction of the transistor receives current, electrons are drawn to the collector side of the transistor’s junction. This action produces a large current on the collector side, as the electrons are located near the base-emitter junction.
The FMMT722TA also utilizes the principle of current amplification. When the transistor is switched on and off, the current flowing between the emitter and collector is amplified or multiplied. This is due to the fact that the base- collector voltage controls the base-emitter voltage, which in turn determines the magnitude of the current passing through the transistor.
FMMT722TA transistors also incorporate the principle of negative resistance. This occurs when the voltage between the base and the emitter is adjusted. When the voltage is decreased, the current between the base and the collector increases, resulting in negative resistance.
FMMT722TA transistors also provide thermal protection. This is due to their ability to operate at low temperatures, so that the heat they generate does not cause any damage. In addition, FMMT722TA transistors incorporate the principle of negative temperature coefficient, so that the power dissipation of the device decreases as the temperature increases.
Finally, FMMT722TA transistors can also help in controlling interference in circuits, as they can reduce radio frequency interference. This is due to the fact that they possess a low capacitance between the pins. Thus, they are capable of preventing high levels of interference that can interfere with the operation of electronic circuits.
In conclusion, FMMT722TA transistors offer a variety of applications and working principles. They are reliable, efficient, and suitable for a wide range of applications. For these reasons, FMMT722TA transistors remain one of the most popular transistors for a variety of consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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