Allicdata Part #: | FQB9N15TM-ND |
Manufacturer Part#: |
FQB9N15TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 9A D2PAK |
More Detail: | N-Channel 150V 9A (Tc) 3.75W (Ta), 75W (Tc) Surfac... |
DataSheet: | FQB9N15TM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB9N15TM is a type of Field-Effect Transistor (FET) manufactured by DE-Rego Semiconductor. It is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) specifically designed for high-voltage applications. It features a high breakdown voltage of 900V and a low on-resistance of 15mΩ. It is capable of operating at high temperature up to 175°C, and it is also RoHS compliant. This MOSFET is suitable for use in industrial, automotive and high-voltage switching applications.
A FET is a type of transistor that can be used as an amplifier, switch, or voltage regulator. It consists of a semiconductor channel through which electrons can flow, and three terminals – the gate, source and drain. By controlling the amount of voltage applied to the gate terminal, the current flowing through the channel can be regulated.
FQB9N15TM is a single MOSFET, meaning it contains one input and one output. This type of device uses a single three-terminal connection to both open and close the switch. FQB9N15TM is a Drain-Gate-Source (DGS) type of MOSFET. In this setup, the output is in the Drain of the device while the source is connected to the power source. Applying a voltage at the gate terminal will open and close the switch, controlling the current flow through the channel.
FQB9N15TM is mostly used in high-voltage applications, as it has one of the highest breakdown voltages among FETs and MOSFETs. Due to its low on-resistance, this MOSFET is also capable of achieving high efficiency in power conversion applications. This makes it perfect for a wide array of applications, including industrial, automotive and high-voltage switching applications.
In electrical engineering, FETS and MOSFETs are widely used components in power circuits. They are used to control the flow of voltage and current, and can be used as either an amplifier or a switch. The FQB9N15TM is an ideal choice for high-voltage applications due to its ability to withstand up to 900V, its RoHS compliance, and its low on-resistance. This makes it a perfect choice for a variety of applications, such as automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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