FQB9P25TM Discrete Semiconductor Products |
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Allicdata Part #: | FQB9P25TMTR-ND |
Manufacturer Part#: |
FQB9P25TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 250V 9.4A D2PAK |
More Detail: | P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Sur... |
DataSheet: | FQB9P25TM Datasheet/PDF |
Quantity: | 1000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 620 mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1180pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.13W (Ta), 120W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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FQB9P25TM is a type of Field Effect Transistor (FET) commonly used for power management in applications such as communications equipment, consumer electronics, and automotive electronics. It is part of the SuperFET family of high-speed low-voltage enhancement mode FETs that have been designed to provide high speed switching and low on-resistance in a very small form factor. FQB9P25TM is an N-channel device suitable for situations when a positive gate voltage results in a low on-resistance path between the drain and the source.
Field Effect Transistors are based on semiconductor physics, in which an electric field creates an electron flow through a conductive channel. FETs are the most common type of power semiconductor device and are essential components in the design of switching power supplies, DC/DC converters, motor control, and other high frequency power management applications. FETs are classified as either enhancement-mode FETs or depletion-mode FETs, depending on the specific application. FQB9P25TM is an enhancement-mode FET, meaning that it has an off-state resistance when the gate voltage is zero, and an on-state resistance when the gate voltage is higher than the threshold voltage.
FQB9P25TM is constructed from a single Silicon die with a wide variety of features, including ultra-low on-resistance, high current capability, low gate charge, and fast switching times. The device has a single 0.25mm lead frame with a maximum operation temperature of 150°C. The device uses dynamic drain-source feedback to minimize dynamic power losses and improve power efficiency.
The most common application of FQB9P25TM is in power consumption management applications. It can be used in a variety of applications such as in communications equipment, consumer electronics, and automotive electronics. The device can be used to reduce power consumption by switching on and off power devices quickly and can also be used to regulate power consumption when load current needs to be reduced. In home appliances, FQB9P25TM can be used as a controlling device to regulate voltage levels for efficient energy consumption.
The working principle of FQB9P25TM is based on an electrostatic gate, which allows a small amount of current to be passed between the drain and the source, thus controlling the flow of current across the drain-source path. When the gate voltage is increased, the device acts as an open switch, allowing current to flow freely, thus reducing the on-resistance. When the gate voltage is reduced, the device acts as a closed switch, thus increasing the on-resistance. This allows for precise control of the current and the power consumption of the device.
FQB9P25TM is an effective solution for power management in a wide variety of applications due to its low on-resistance, high current handling capabilities, low gate charge, and fast switching speed. The device can be used either as a switch or as a regulator, allowing for precise control of the current and power consumption. It is an ideal choice for power applications where high speed switching and low on-resistance is required in a small form factor.
The specific data is subject to PDF, and the above content is for reference
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